International Business Machines Corporation

Thomas H Strudwick

Victor J Silvestri

Pavel Smetana

Kyong-Min Kim

Robert E Bendernagel

William H White

William J Patrick

Bernard K Bischoff

A semiconductor structure including a doped semiconductor substrate defining a surface. A buffer layer of epitaxial semiconductor material overlies the substrate surface, the buffer layer having a relatively higher dopant concentration than the substrate and being virtually free from oxygen precipitation. A layer of intrinsic semiconductor material overlies the buffer layer, and a device layer of epitaxial semiconductor material is situated on the intrinsic layer. The device layer is formed to have a relatively lower dopant concentration than the first layer. Isolation regions extend from a surface of the device layer into the buffer layer for forming an electrically isolated device region in the device layer. At least one active device is formed in the isolated device region.

Semiconductor device structure employing a multi-level epitaxial

Method of manufacturing a semiconductor device structure employing a

A wide precipitate-free-zone (PFZ) is formed at the surface of a semiconductor substrate and at the same time a high density of oxygen precipitate particles are produced beneath at the surface PFZ by a two step annealing process involving a first cycle of very rapidly heating the wafers to a first high temperature and a second cycle of very slowly heating the wafers to a second high temperature.

Method for tailoring oxygen precipitate particle density and

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Wappingers Falls, NY, United States of America

Thomas H Strudwick