Applied Materials, Inc.

Thomas H Osterheld

Steven M Zuniga

Benjamin Cherian

Jun Qian

Boguslaw A Swedek

Dominic J Benvegnu

Fred Conrad Redeker

Charles C Garretson

Doyle E Bennett

Nicholas Alexander Wiswell

Jeffrey Drue David

Jeonghoon Oh

Benjamin A Bonner

Hung Chih Chen

Jimin Zhang

Sen-Hou Ko

Brian J Brown

Eric Lau

Shijian Li

Shou-Sung Chang

Paul D Butterfield

Kun Xu

Sivakumar Dhandapani

Huanbo Zhang

Stephen Jew

Raymond R Jin

Rajeev Bajaj

Harry Q Lee

Jianshe Tang

Jason Garcheung Fung

Gopalakrishna B Prabhu

Gregory E Menk

Sidney P Huey

Terrance Y Lee

Mohsen Salek

Michael W Richter

Zhize Zhu

Ginetto Addiego

King Yi Heung

Peter McKeever

Manoocher Birang

Jay D Pinson, Ii

Wei-Yung Hsu

Daniel Redfield

Robert D Tolles

Boris Fishkin

Wen-Chiang Tu

Tomohiko Kitajima

Allen L D'Ambra

Ingemar Carlsson

Ashwin Chockalingam

David Masayuki Ishikawa

Jagan Rangarajan

Edwin C Suarez

Zhihong Wang

Chih Chung Chou

David J Lischka

James Chang Wang

Lawrence M Rosenberg

Erik S Rondum

Anand N Iyer

Thomas Li

Garlen C Leung

Christopher Heung-Gyun Lee

Adam Zhong

David H Mai

Peter McReynolds

Yutao Ma

Christopher W Smith

Jin Yi

Deepak N Kumar

Vasanth N Mohan

Nitin Shah

Gary Ka Ho Lam

Ningzhuo Cui

Shuchivrat Datar

Yi-Yung Tao

Yong-Sik R Kim

Chad Garretson

Ginnetto Addiego

Paul Flores

Sohrab Pourmand

David Chui

Shih-Haur Walters Shen

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ acoustic monitoring system, and a controller. The controller is configured to detect exposure of an underlying layer due to the polishing of the substrate based on measurements from the in-situ acoustic monitoring system. The in-situ acoustic monitoring system may detect exposure of an underlying layer based on comparison of the signal to prior measurements of acoustic signals generated by stress energy of test substrates.

Passive acoustic monitoring and acoustic sensors for chemical mechanical polishing

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ acoustic monitoring system comprising an acoustic sensor that receives acoustic signals from the surface of the substrate, and a controller configured to determine a angular orientation of the substrate based on received acoustic signals from the in-situ acoustic monitoring system.

Determining substrate orientation with acoustic signals

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ vibration monitoring system including a light source to emit a light beam and a sensor that receives a reflection of the light beam from a reflective surface of the polishing pad, and a controller configured to detect exposure of an underlying layer due to the polishing of the substrate based on measurements from the sensor of the in-situ pad vibration monitoring system.

Chemical mechanical polishing vibration measurement using optical sensor

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ acoustic monitoring system comprising an acoustic sensor that receives acoustic signals from the surface of the substrate, and a controller configured to determine an angular orientation of the substrate based on received acoustic signals from the in-situ acoustic monitoring system.

Determining substrate precession with acoustic signals

Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for a plurality of locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to the carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones from a plurality of pressurizable zones of the carrier head that are spaced angularly around the center of the substrate, and for each particular zone of the plurality of zones, calculating a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.

Control of processing parameters for substrate polishing with substrate precession

During chemical mechanical polishing of a substrate, a signal value that depends on a thickness of a layer in a measurement spot on a substrate undergoing polishing is determined by a first in-situ monitoring system. An image of at least the measurement spot of the substrate is generated by a second in-situ imaging system. Machine vision processing, e.g., a convolutional neural network, is used to determine a characterizing value for the measurement spot based on the image. Then a measurement value is calculated based on both the characterizing value and the signal value.

Machine vision as input to a CMP process control algorithm

A method of generating training spectra for training of a neural network includes measuring a first plurality of training spectra from one or more sample substrates, measuring a characterizing value for each training spectra of the plurality of training spectra to generate a plurality of characterizing values with each training spectrum having an associated characterizing value, measuring a plurality of dummy spectra during processing of one or more dummy substrates, and generating a second plurality of training spectra by combining the first plurality of training spectra and the plurality of dummy spectra, there being a greater number of spectra in the second plurality of training spectra than in the first plurality of training spectra. Each training spectrum of the second plurality of training spectra having an associated characterizing value.

Training spectrum generation for machine learning system for spectrographic monitoring

A polishing apparatus includes a polishing station to hold a polishing pad, a carrier head to hold a substrate in contact with a polishing pad at the polishing station, a camera positioned to capture an image of a lower surface of a consumable part when the consumable part moves away from the polishing pad, and a controller configured to perform an image processing algorithm on the image to determine whether the consumable part is damaged. The consumable part can be a retaining ring on a carrier head, or a conditioner disk on a conditioner head.

Consumable part monitoring in chemical mechanical polisher

Generating a recipe for controlling a polishing system includes receiving a target removal profile that includes a target thickness to remove for a plurality of locations on a substrate that are angularly distributed around the substrate, and storing a first function defining a polishing rate for a zone from a plurality of pressurizable zones of a carrier head that are angularly distributed around a the carrier head. The first function defines polishing rates as a function of pressures. For each particular zone of the plurality of zones a recipe defining a pressure for the particular zone over time is calculated by calculating an expected thickness profile after polishing using the first function, and minimizing a cost function that incorporates a first term representing a difference between the expected thickness profile and a target thickness profile.

Control of processing parameters for substrate polishing with angularly distributed zones using cost function

A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.

Polishing system with annular platen or polishing pad

An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner to press an abrasive body against the polishing surface, an in-situ polishing pad monitoring system including an imager disposed above the platen to capture an image of the polishing pad, and a controller configured to receive the image from the monitoring system and generate a measure of polishing pad surface roughness based on the image. The controller can use machine-learning based image processing to generate the measure of surface roughness.

Monitoring of polishing pad texture in chemical mechanical polishing

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, the platen having a recess, a flexible membrane in the recess, and an in-situ vibration monitoring system to generate a signal. The in-situ acoustic monitoring system includes a vibration sensor supported by the flexible membrane and positioned to couple to an underside of the polishing pad.

Monitoring of vibrations during chemical mechanical polishing

A substrate cleaning system includes a cleaner module to clean a substrate after polishing of the substrate, a drier module to dry the substrate after cleaning by the cleaner module, a substrate support movable along a first axis from a first position in the drier module to a second position outside the drier module, and an in-line metrology station including a line-scan camera positioned to scan the substrate as the substrate is held by the substrate support and the substrate support is between the first position to the second position. The first axis is substantially parallel to a face of the substrate as held in by the substrate support.

Imaging for monitoring thickness in a substrate cleaning system

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Mountain View, CA, United States of America

Thomas H Osterheld