Delco Electronics Corporation

Thomas H Manderfield

Mark Ford Henderson

A MOS integrated circuit in which a plurality of MOS devices on a substrate are interconnected with each other and with signal, power and ground pads in first and second electrical circuits adapted to process separate electrical signals. The pads are formed of first metal members below a passivation layer and second metal members in a second metallization layer projecting through openings in the passivation layer to contact the first metal members. A pair of adjacent signal carrying elements in the first and second electrical circuits subject to crosstalk through a horizontal parasitic capacitance of the passivation layer are shielded by a first metal member of the first metallization layer and a second metal member of the second metallization layer connected to the first metal member and extending through and above the passivation layer to block the capacitive coupling therethrough, the first and second metal members being grounded to the ground pad through the first metallization layer below the passivation layer or through the second metallization layer above the passivation layer.

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Greentown, IN, United States of America

Thomas H Manderfield