Advanced Technology Materials, Inc.

Entegris, Inc.

International Business Machines Corporation

Other

Infineon Technologies LLC

Lexmark Corporation

Thomas H Baum

Chongying Xu

Jeffrey F Roeder

Bryan Clark Hendrix

Tianniu Chen

Ziyun Wang

Philip S H Chen

Peter C Van Buskirk

Michael B Korzenski

David Daniel Bernhard

Steven M Bilodeau

Frank S Hintermaier

Gautam Bhandari

Robert Wright, Jr

Alexander S Borovik

William Hunks

David W Minsek

Gregory T Stauf

Peter S Kirlin

Matthias Stender

David M Ermert

Frank DiMeo, Jr

Debra A Desrochers

Eliodor G Ghenciu

Thomas M Cameron

Ing-Shin Barry Chen

David Kuiper

Scott L Battle

James J Welch

Witold Paw

Melissa K Rath

William A Wojtczak

Paul B Comita

Timothy E Glassman

Ravi Kumar Laxman

Mackenzie E King

Robin A Gardiner

Michael W Russell

Daniel J Vestyck

Cary Regulski

Seobong Chang

Brian A Vaartstra

Edward A Sturm

Stephen T Johnston

Michael A Todd

Long Van Nguyen

Carl Eric Larson

Jeffrey W Neuner

John M Cleary

Luis Jesus Matienzo

James V McManus

Luping Wang

J Donald Carruthers

Peng Zou

Christine Dehm

Karl E Boggs

Steven M Lurcott

Joseph Robert Despres

Robert L Jackson

Cindy Reidsema Simpson

Richard D Chism

Peter Wrschka

Joseph Edward Varsik

Glenn M Tom

Scott Kevin Reynolds

Phillip Joe Brock

Joseph D Sweeney

Brian L Benac

David Walter Peters

Michael J Wodjenski

Duncan W Brown

Donald D Ware

Melissa A Petruska

Jun Liu

Michael S Darsillo

Joshua B Sweeney

Douglas J Gordon

Anthony M Avila

George William Tyndall, Iii

Michael Albert Tischler

Adrien Lavoie

Alfred Viehbeck

Terrence Robert O'Toole

Thomas Anthony Wassick

George R Brandes

Jose I Arno

W Karl Olander

Harsono S Simka

Frances Anne Houle

Juan E Dominguez

John H Coates

Daniel Joseph Dawson

Matthew Kusz

James Economy

Caroline A Kovac

Arthur F Diaz

Ma Fatima Seijo

Ping Jiang

Carol R Jones

Franklin M Schellenberg

Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)) or tungsten hexacarbonyl (W(CO)) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of HO is utilized. This pulsing with HO vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)-based CVD processes.

Group VI metal deposition process

Described are vapor deposition methods for depositing metal films or layers onto a substrate, e.g., wherein the metal is molybdenum or tungsten; the methods involve vapor deposition of a metal layer onto a substrate from a metal-containing precursor in the presence of reducing gas (e.g., hydrogen) and a nitrogen-containing reducing compound.

Methods for depositing a tungsten or molybdenum layer in the presence of a reducing co-reactant

Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Process for preparing organotin compounds

The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

Group VI precursor compounds

Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Methods for depositing tungsten or molybdenum films

The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co(CO)(RC≡CR), where Rand Rare different organic moieties and Ris more electronegative or more electron withdrawing compared to R.

Haloalkynyl dicobalt hexacarbonyl precursors for chemical vapor deposition of cobalt

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing Oand NHco-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Vapor deposition precursor compounds and process of use

The invention provides a facile process for preparing various Group VI precursor compounds, set forth below as Formula (I), useful in the vapor deposition of certain Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. Also provided is a process for the preparation of such precursor compounds. Additionally, the invention provides a method for vapor deposition of Group VI metals onto microelectronic device substrates utilizing the precursor compounds of the invention.

Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.

Precursors and methods for preparing silicon-containing films

Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with Oplasma.

Method for forming carbon rich silicon-containing films

Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula RRRu(0), wherein Ris an aryl group-containing ligand, and Ris a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

Chemical vapor deposition processes using ruthenium precursor and reducing gas

Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 Å to about 15 Å and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.

Method for nucleation of conductive nitride films

The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoOCl.

Oxyhalide precursors

The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co(CO)(RC&#x2261;CR), where Rand Rare different organic moieties and Ris more electronegative or more electron withdrawing compared to R.

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New Fairfield, CT, United States of America

Thomas H Baum