Teknologian Tutkimuskeskus Vtt Oy

Pibond Oy

Silecs, Inc.

Thomas Gädda

Juha T Rantala

Wei-Min Li

David Thomas

William McLaughlin

Leena Nurmi

Ali Harlin

Jyri Paulasaari

Jarmo Ropponen

Pia Willberg-Keyriläinen

Mika Härkönen

Harri Heikkinen

Virpi Rämö

Jun Shan

David A Thomas

Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.

Etch resistant alumina based coatings

Described herein is a feasible, significantly simplified production method that avoids challenging lactonization steps and converts a low molecular weight aliphatic polyester, consisting of hydroxy acids and a comonomer, whose molecular weight has been increased by step-growth polymerization reactions. The molecular weight of the aliphatic polyester, based on comparison of initial and final weight average molecular weights (M/M), increased significantly at a rate which permits the use of reactive extrusion to produce high molecular weight aliphatic polyesters in a simple, economically feasible manner.

Method of producing glycolic acid polymers

The present invention relates to a method for preparation a glycolide polyester by ring opening polymerization characterized in that glycolide monomer with optional co-monomer(s) of cyclic ester(s) is/are subjected to ring opening polymerization in the presence of a dispersion stabilizer and a catalyst, said catalyst being selected for precipitating glycolide homopolymer or copolymer from solvent, said solvent being selected so that the glycolide monomer and the optional co-monomer(s), the dispersion stabilizer and the catalyst are soluble therein but said glycolide homopolymer or copolymer is non-soluble. The present invention further relates to an in situ ring opening polymerizing process product, and to use of said glycolide polyester, and to further processing of said glycolide polyester.

Method for preparing glycolide polyester by ring opening polymerization

Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminum oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.

Thin films are disclosed that are suitable as thin films in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a high silicon content film.

High silicon content siloxane polymers for integrated circuits

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Espoo, Finland

Thomas Gädda