Apple Inc.

Intel Corporation

Infineon Technologies Ag

Thomas Gustedt

Andreas Roithmeier

Christian Wicpalek

Herwig Dietl-Steinmaurer

Thomas Mayer

Tobias Buckel

Hans Geltinger

Andreas Leistner

Svetozar Broussev

Andreas Jörn Leistner

A digital phase-locked loop has a digitally controlled oscillator with a first coarse tuning field for coarse tuning of the oscillator frequency, a second coarse tuning field for tuning of the oscillator frequency at finer intervals than the first coarse tuning field, and a fine tuning field for tuning the oscillator to an output frequency at finer intervals than the second coarse tuning field. The second coarse tuning field provides open loop tuning and is linear and connected parallel to the first coarse tuning field. The second coarse tuning field provides wide field temperature compensation and frequency error determination at start up based on an interpolated frequency value obtained prior to start up. Faster settling is provided with less complex algorithms.

Method and apparatus for improved DPLL settling and temperature compensation algorithms using second open loop oscillator tuning field

A phase locked loop system includes bias voltage adjustment circuitry and a voltage regulator that outputs a smoothed core voltage to an oscillator. The bias voltage adjustment circuitry is configured to compute a scaled bias voltage based at least on a target frequency for the oscillator. The voltage regulator is configured to input i) the scaled bias voltage and ii) a selected core voltage that is selected based on the target operating frequency of the oscillator and generate the smoothed core voltage for output to the oscillator.

Frequency based bias voltage scaling for phase locked loops

Various designs for MOS transistor-based RF switch topologies for high speed capacitive tuning of oscillators switch circuits include a main switch device comprising a gate connected to a control terminal, a drain connected to a first terminal that is connected to the first capacitor, and a source connected to a second terminal that is connected to the second capacitor. The switch further comprises a first NMOS device having a gate connected to the main switch device gate, a source connected to a ground, and a drain connected to the first terminal. The switch further comprises a second NMOS device having a gate connected to the main switch device gate, a source connected to a ground, and a drain connected to the second terminal. The switch further comprises a pair of PMOS devices each having drains connected respectively to the first and second terminals.

MOS transistor-based RF switch topologies for high speed capacitive tuning of oscillators

An oscillator is provided which comprises an array of capacitances. At least some capacitances in the array have different capacitance values.

Oscillator with capacitance array

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Munich, Germany

Thomas Gustedt