Infineon Technologies Ag

Thomas Grille

Ursula Hedenig

Peter Irsigler

Bernhard Jakoby

Thomas Krotscheck Ostermann

Daniel Maurer

Ulrich Schmid

Andreas Tortschanoff

Cristina Consani

Markus Kahn

Tobias Frischmuth

Ventsislav M Lavchiev

Guenter Denifl

Christian Ranacher

Michael Schneider

Jonathan Silvano De Sousa

Thomas Christian Neidhart

Martin Zgaga

Gerald Stocker

Banafsheh Abasahl

Reyhaneh Jannesari

Carsten Ahrens

Michael Roesner

Gudrun Stranzl

Wolfgang Friza

Klaus Muemmler

Vijaye Rajaraman

Thomas Popp

Ulf Bartl

Stefan Clara

Gerald Puehringer

Elmar Aschauer

Christoph Kovatsch

Alfons Dehe

Carsten Von Koblinski

Andre Brockmeier

Joachim Hirschler

Sokratis Sgouridis

Markus Ottowitz

Joern Plagmann

Helmut Schoenherr

Soenke Pirk

Manuel Dorfmeister

Guenter Zieger

Günter Denifl

Manfred Kaltenbacher

Ralph Muth

Sylvicley Figueira Da Silva

Ventsislav Lachiev

Guenter Ziegler

Reinhard Hainisch

Clement Fleury

Anisuzzaman Boni

A fluid sensor includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a thermal radiation detector on the top main surface region of the support structure; and a waveguide structure having a first and a second waveguide section on the top main surface region of the support structure. The first waveguide section guides a first portion of the thermal radiation to the thermal radiation detector and the second waveguide section guides a second portion of the thermal radiation to the thermal radiation detector. The waveguide structure enables an interaction of an evanescence field of the guided first and/or second portion of the thermal radiation with a surrounding fluid.

Sensor and method for detecting guided thermal radiation

A fluid sensor for performing a reference measurement includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a first waveguide section and a first thermal radiation detector on the top main surface region of the support structure; and a cover structure on at least one part of the first waveguide section. The first waveguide section guides a first portion of the thermal radiation emitted by the thermal emitter to the first thermal radiation detector. The first thermal radiation detector detects the guided first portion of the thermal radiation for performing the reference measurement.

Sensor and method for performing a reference measurement with guided thermal radiation

An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.

Optical resonator system, narrowband mid-infrared radiation source

A MEMS structure including a latch, a first lever, and a second lever. The first lever is designed to move past the latch as a result of flexure in the event of a change in a parameter in a first direction, and to latch in place at the latch if a change in the parameter in a second direction different than the first direction subsequently takes place. The second lever is designed to move past the first lever as a result of flexure in the event of the change in the parameter in the second direction, and to latch in place at the first lever if a change in the parameter in the first direction takes place after the change in the parameter in the second direction.

MEMS structure and method for detecting a change in a parameter

A fluid sensor includes a substrate having a top main surface region, wherein the top main surface region of the substrate forms a common system plane of the fluid sensor, a thermal radiation emitter on the top main surface region of the substrate, an optical filter structure on the top main surface region of the substrate, a waveguide on the main top surface region of the substrate, and a thermal radiation detector on the top main surface region of the substrate, wherein the thermal radiation detector provides a detector output signal based on a radiation strength of the filtered thermal radiation received from the waveguide.

Fluid sensor including an optical filter and a waveguide, and method for manufacturing the fluid sensor

In accordance with an embodiment, a bandpass transmission filter having a center wavelength of transmission includes: a waveguide structure comprising a grating structure having changing grating pitch values configured to diffract radiation in the waveguide structure having a first wavelength lower than the center wavelength of transmission, and configured to reflect radiation in the waveguide structure having a second wavelength higher than the center wavelength of transmission; and a radiation absorbing structure configured to absorb radiation guided by the waveguide structure having a third wavelength higher than the second wavelength, wherein the radiation absorbing structure is an integrated part of the waveguide structure or comprises a layer arranged adjacent to the waveguide structure.

Bandpass transmission filter and narrowband radiation source

An emitter for emitting electromagnetic radiation includes a first region for thermally generating electromagnetic radiation, wherein the first region includes a first photonic crystal of the type having a first periodical structure with first holes having a first dimension and being at a first periodicity, so as to define a first dimension-to-periodicity ratio; and a second region for filtering the electromagnetic radiation generated in the first region, wherein the second region includes a second photonic crystal of the type having a second periodical structure with second holes having a second dimension and being at a second periodicity, so as to define a second dimension-to-periodicity ratio, wherein the second dimension-to-periodicity ratio is different from the first dimension-to-periodicity ratio.

Device and method for emitting electromagnetic radiation

A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.

MEMS-component

In accordance with an embodiment, a gas sensor includes a substrate having a cavity for providing an optical interaction path; a thermal emitter configured to emit broadband IR radiation; a wavelength selective structure configured to filter the broadband IR radiation emitted by the thermal emitter; and an IR detector configured to provide a detector output signal based on a strength of the filtered IR radiation having traversed the optical interaction path.

Gas sensor

Techniques (e.g., implemented in devices, methods and/or in non-transitory storage units) are used for confining wavelengths, e.g., using a pillar photonic crystal. A semiconductor device includes a pillar photonic crystal including a structure and a plurality of pillars extending from the structure in a height direction, wherein the plurality of pillars form at least one waveguide for electromagnetic radiation at a specific wavelength, the at least one waveguide extending in at least one planar direction, wherein the structure includes a confining layer in doped semiconductor material to support propagation of surface plasmon polaritons.

Pillar photonic crystal

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Micromechanical structure and method for manufacturing the same

Aspects of a microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device, are discussed herein. The microelectromechanical device may include: a substrate; a diaphragm mechanically coupled to the substrate, the diaphragm comprising a stressed region to buckle the diaphragm into one of two geometrically stable positions; an actuator mechanically coupled to the diaphragm, the actuator comprising a piezoelectric layer over the diaphragm; a controller configured to provide an electrical control signal in response to a digital sound input; wherein the actuator is configured to receive the electrical control signal to exert a mechanical piezoelectric force on the diaphragm via the piezoelectric layer to move the diaphragm to create a sound wave.

Microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device

A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8&#xd7;10quantum structures per cm. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 &#x3bc;m and 10 &#x3bc;m or to absorb light with a light absorption maximum at a wavelength of between 2 &#x3bc;m and 10 &#x3bc;m.

Semiconductor devices, a fluid sensor and a method for forming a semiconductor device

A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. The input coupling structure is configured to receive emitted light at a selected coupling efficiency and may provide filtering of the emitted light for a selected wavelength. The interaction region is coupled to the input coupling structure and configured to interact the light from the input coupling structure with a specimen. The output coupling structure is coupled to the interaction region and configured to provide interacted light from the interaction region to the detector.

Sensing systems and methods using a coupling structure

A sensor and methods of making a sensor are disclosed. The sensor may include a substrate including an opening, an optical source disposed in the substrate and configured to generate an optical source signal, an optical detector disposed in the substrate so that the opening is disposed between the optical source and the optical detector, a plurality of optical cavity structures disposed in the opening wherein each of the plurality of optical cavity structures contains an enclosed cavity so that the respective enclosed cavities are not in gas communication with each other, wherein the plurality of optical cavity structures are arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to process an optical signal received by the optical detector.

Photonic crystal sensor structure and a method for manufacturing the same

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Villach, Austria

Thomas Grille