Giesecke & Devrient Gmbh

Siemens Aktiengesellschaft

Thomas Grassl

Zvonimir Gabric

Oswald Spindler

Manfred Engelhardt

Walter Straub

Arvid Wiren

The invention relates to a portable data carrier system having a control unit, a body, a data memory integrated in a chip, in which security-relevant data can be stored, and a feature for permitting information exchange between the control unit and an external access unit. A security device of the chip transmits a security signal that is influenced by an influencing feature integrated in the body and non-electrically connected with the security device. A detection feature of the security device detects the influenced security signal, an evaluation feature evaluates the detected, influenced security signal, and a blocking feature blocks a security-critical operating state of the data carrier system if the evaluation feature does not recognize a security signal influenced in the expected way.

Portable data carrier assembly comprising a security device

This invention relates to a vertically integratable circuit and a method for producing same. Unlike known methods for producing vertical electric connections, the present method uses process steps in the production of the vertically integratable circuit itself to permit vertical integration. This simplifies the sequence of production for vertically integratable circuits and thus the three-dimensional integrated circuit as a whole, thereby optimizing plant running times since process steps are saved. Because finished substrates are no longer the starting point for producing the vertical electric connections, an improved yield is moreover obtained since no process steps which could in particular change the already produced active circuit elements, such as steps with high process temperatures, are necessary any longer after production of the circuit elements.

Circuit suitable for vertical integration and method of producing same

A method for protecting a security data memory is described wherein external action on a component containing the security data memory is detected by sensors. Overshooting of a threshold on one of the sensors causes an attack to be signaled by reason of which the content of the security data memory is at least partly erased. The status of the sensors is permanently monitored and the status data of the sensors recorded.

Method for protecting a data memory

In a semiconductor memory chip module ( &prime;) for a smart card, a nonvolatile memory chip (EEPROM) ( ) and a volatile memory chip (SRAM) ( ) are stacked and coupled directly by vertical chip interconnections ( ). The rapid-access volatile memory permits fast execution of programs. Permanent and safe storage of data is effected by reloading the data to the nonvolatile memory. A chip ( ) with decoder circuits can be contained in a further level. Likewise integrated into a chip is a buffer capacitor ( ) which is constantly recharged to a constant supply voltage during operation.

Semiconductor memory chip module

A method for producing an integrated circuit wherein a substrate is provided that includes a circuit structure and a first metalization structure disposed thereover comprising at least one layer with plated holes extending therethrough and into the circuit structure. The plated holes are insulated and a planarizing layer is disposed over the metalization structure. A handling wafer is applied over the substrate permitting the substrate to be thinned such that metalized connections disposed in the plated holes are exposed. A second metalization structure is provided and connected to the circuit structure and/or the first metalization structure by the metalized connections.

Method for producing an integrated circuit processed on both sides

Process for generating a space in a structure

When large-scale integrated circuits are produced, pronounced differences in height occur within conductor track levels. Those extreme topographies lead to difficulties during photo-lithographic processes, since there is a direct relationship between resolution and depth of focus. A production method for applying an insulation layer functioning as an intermetal dielectric is based on an ozone-activated selective deposition of silicon oxide. The conductor tracks are completely encapsulated with an insulation layer, so that bulges do not occur above upper edges of the conductor tracks.

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Freising, Germany

Thomas Grassl