Ihp Gmbh - Innovations for High Performance Microelectronics

Ihp Gmbh-innovations for High Performance Microelectronics/institut Fur Innovative Mikroelektronik

Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik

Thomas Grabolla

Bernd Tillack

Dirk Wolansky

George Ritter

Georg Ritter

A reactor arrangement for layer deposition on a plurality of substrates (hereafter substrates) comprising a first reactor chamber for simultaneous cleaning the substrates, at least one second reactor chamber for depositing at least one layer on each of the substrates, a first heating device for setting the substrate temperature of the substrates in the first reactor chamber, a second heating device for setting the substrate temperature of the substrates in the second reactor chamber, a device for producing a gas atmosphere of predetermined composition and predetermined pressure, a transport device for transporting the substrates simultaneously from the first to the second reactor chamber, and a control device for controlling the heating devices and device for producing the gas atmosphere in such a way that the substrates are moved or stored in an interruption-free manner in a reducing gas atmosphere as long as the substrate temperature is above critical temperature T.

Apparatus for low-temperature epitaxy on a plurality semiconductor substrates

System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor substrates at a high throughput. The surfaces of the semiconductor substrates to be coated are first cleaned, and the substrates are then heated in a low pressure batch reactor to a first temperature (prebake temperature). The surfaces to be coated are next subjected to a hydrogen prebake operation at a first reactor pressure. In the next step the semiconductor substrates are heated in a low pressure hot or warm wall batch reactor to a second temperature (deposition temperature) lower than the first temperature, and after a condition of thermodynamic equilibrium is reached the diffusion-inhibiting semiconductor layers are deposited on the surfaces to be coated in a chemical gaseous deposition process (CVD) at a second reactor pressure higher than, equal to or lower than the first reactor pressure.

Method and device for the production of thin epitaxial semiconductor layers

Growing community of inventors

Munich, Georgia

Thomas Grabolla