University of California

Finisar Corporation

Triquint Technology Holding Co.

Thomas Gordon Beck Mason

Gregory Alan Fish

Joseph Michael Freund

Larry Allen Coldren

Giorgio Giaretta

Frank Stephen Walters

Lewis B Aronson

Daniel Jacob Blumenthal

Jiashu Chen

John M Geary

Yuxin Zhou

Charles William Lentz

Robert E Tench

Julie Sheridan Eng

Joseph Patrick Reynolds

Huy Anh Vu

This disclosure concerns optoelectronic transceivers. In one example, a transceiver is implemented as an uncompensated architecture that is substantially compliant with the SFP MSA and is capable of effective operation at a data rate of about 8.5 Gb/s. The transceiver includes a TOSA, ROSA, a printed circuit board, an LDPA disposed on the printed circuit board and configured for communication with the TOSA and the ROSA. Finally, the transceiver includes SFP compliant optical and electrical connections.

High speed SFP transceiver

This disclosure concerns transceivers that include CDR bypass functionality. In one example, a 10 G XFP transceiver module includes integrated CDR functionality for reducing jitter. The 10 G XFP transceiver module also implements CDR bypass functionality so that the CDR can be bypassed at rate less than about 10 Gb/s, such as the Fibre Channel 8.5 Gb/s rate for example.

XFP transceiver with 8.5G CDR bypass

A tunable laser source () with an integrated optical modulator (). The laser source () is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (), wherein both the waveguide layer () and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator () is integrated into the semiconductor laser (), wherein the electro-absorption modulator () shares the waveguide layer () with the semiconductor laser.

Tunable laser source with integrated optical modulator

A semiconductor tunable laser () and an interferometer () coupled to the tunable laser () are monolithically fabricated in a semiconductor heterostructure. The laser also comprises a buried ridge stripe waveguide laser. The interferometer () has a semiconductor optical amplifier () coupled in each arm. A cross-gain semiconductor optical amplifier converter is coupled to the interferometer (). The semiconductor optical amplifier () coupled in each arm is biased so that an optical path length difference between the two arms is in antiphase which results in destructive interference. The output of the tunable laser () is coupled to a coupler. A semiconductor optical amplifier () is used as a gain controller for the semiconductor optical amplifiers in the interferometer () to allow wavelength conversion over a larger range of input signal powers. The heterostructure substrate comprises a low bandgap waveguide layer and thinner multi-quantum well active regions disposed above the low bandgap waveguide layer. The heterostructure substrate has nonabsorbing passive elements formed therein by selectively removing the quantum wells regions above the waveguide layer to allow formation of active and passive sections in the waveguide layer without having to perform a butt joint regrowth. The invention is also characterized as a method of fabricating an integrated optical device as disclosed above in the heterostructure substrate.

Integrated wavelength tunable single and two-stage all-optical wavelength converter

An optical modulator includes first and second modulator segments. The first and second modulator segments form an optical signal path for an optical signal. The optical modulator also includes an electrical signal path capable of receiving and carrying a modulation signal, which is applied to the optical signal at the first and second modulation segments to generate a modulated optical signal. An inductive element may be disposed between electrical inputs to the first and second modulator segments. The optical modulator may be an electro-absorption modulator (EAM). The inductive element may be an inductor or a transmission line segment.

Segmented modulator for high-speed opto-electronics

An electroabsorption modulator comprises a tandem arrangement of a conventional electroabsorption (EA) modulator element and a phase modulator element. The EA modulator element is driven by the digital data signal and the phase modulator is driven by a chirp tuning control signal, such as the complement of the data signal. By controlling the amplitude and/or bias of the chirp tuning control signal, the frequency chirp of the intensity-modulated output signal from the EA modulator element can be controlled.

Electroabsorption modulator with tunable chirp

A wavelength monitor is provided based on the transmission response of an optical filter. The monitor provides feedback to the laser enabling it to lock to any given wavelength within its tuning range. The invention is also a process for integrating the wavelength monitor directly on chip with a variety of tunable semiconductor lasers. The invention also comprises a method for controlling the wavelength of a tunable laser by using a wavelength monitor to measure the output light and provide feedback to a control system. The laser and wavelength monitor are integrated together on a single indium phosphide chip. The wavelength monitor comprises a filter with a wavelength dependent transmission function and a pair of detectors. One detector is illuminated with light that has passed through the filter and the other provides a reference to measure the input intensity. Taking the ratio of the filtered light level to the unfiltered light provides a wavelength dependent wavelength. The filter is designed such that the transmission function is monotonic and varies from a minimum at one extent of the laser's tuning range to a maximum at the other extent.

Growing community of inventors

San Jose, CA, United States of America

Thomas Gordon Beck Mason