Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thomas Goislard De Monsabert

Jean Dijon

Hélène Le Poche

The invention concerns a method for growing oriented carbon nanotubes on a sample using a target of carbon or a variety of carbon in a deposition chamber where a plasma predominates. The sample () is arranged in contact with the target (), in such a way that the target has a free surface and that the sample offers a free surface, the plasma causing the growth of carbon nanotubes on the free surface of the sample.

Low temperature growth of oriented carbon nanotubes

A process for making nanostructures on a support, including: supplying a support including a surface layer on one of its faces, covering the surface layer by a catalyst layer structured according to a pattern exposing areas of the surface layer covered by the catalyst and areas of the surface layer not covered by the catalyst, etching the thickness of the surface layer in the areas not covered by the catalyst layer, and selectively growing nanostructures on the areas of the surface layer covered by the catalyst. The process can also be used to make cathode structures with electrically independent nanostructures.

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Saint Ismier, France

Thomas Goislard De Monsabert