International Business Machines Corporation

Teracomm Research, Inc.

Other

Leddynamics, Inc.

Interphase Technologies, Inc

Anza Corporation

Thomas George Ference

Wayne John Howell

Claude Louis Bertin

Edmund Juris Sprogis

Kenneth A Puzey

Donald W Brouillette

Ronald Lee Mendelson

William J Cottrell

John Atkinson Fifield

Timothy Harrison Daubenspeck

Peter Alfred Gruber

Michael Straight Hibbs

Harold G Linde

Eric Gerhard Liniger

Robert F Cook

Anthony K Stamper

Steven J Holmes

Jed Hickory Rankin

Eduard Albert Cartier

Alain F Loiseau

Arthur R Zingher

Jay Sanford Burnham

Steven W Mittl

Kurt R Kimmel

William R Tonti

Terence B Hook

Kirk David Peterson

Randy William Mann

Richard Quimby Williams

William F Clark, Jr

Steven Alan Cordes

James L Speidell

Michael J Palmer

William Francis Landers

Dale Warner Martin

Walter E Mlynko

Mark P Murray

Michael Joseph MacDonald

William Richard McGrath

Bernardo Hernandez

Oliver Alexander Piluski

Kathleen M Dever

Juan A Chediak

Daniel Miller Poitrast

Egon Max Kummer

Bernie Hernandez

Harvey Clovis Allard

Michael Dean Caterer

Flag

An illumination device used to replace fluorescent light tubes. The illumination device comprises an LED light strip, a diffusion tube surrounding the LED light strip, and an end cap mounted on each end of the tube. Electrical connectors integrated with the end caps and make electrical connection with the LED light strip. The device may be hermetically sealed, use LED's to rectify the current, have a filament simulator with or without a visual indicator, two-sided or multi-sided light strips, light diffusing end caps and be filled with a life-extending gas. The illumination device results in an LED light tube with improved lighting uniformity, reduced energy consumption, improved ease of use and longer operating life.

LED light tube

The present application is directed to a marking cartridge to be used with a hand tool. The marking cartridge comprises a support structure that includes an engaging element having an engaging end and enclosing surface, a positioning element parallel to the engaging element, the positioning element having a vertical positioning surface and lateral edges, and a vertical step connecting the engaging element to the positioning element to form a depressed support region. The cartridge further comprises an alignment lock extending from the engaging surface; a cartridge aliment guide extending from each lateral edge; a marking element having a marking surface, the marking element mounted in the depressed support region to the vertical positioning surface such that the marking surface extends beyond the enclosing surface; and a resilient material mounted in the depressed support region to the vertical positioning surface and extending beyond the marking surface.

Marking cartridge

An illuminated pop-up candy comprising a housing, cap, moveable candy, moveable illumination system, and switching mechanism. The candy is able to translate and rotate along the length of the housing by the application of pressure to either the candy or the illumination system. The illumination system is switched on and off by touch or translation of the illumination along said housing.

Luminescent pop-up candy

A method and apparatus for controlling the thickness of a semiconductor wafer during a backside grinding process are disclosed. The present invention uses optical measurement of the wafer thickness during a backside grinding process to determine the endpoint of the grinding process. Preferred methods entail measuring light transmitted through or reflected by a semiconductor wafer as a function of angle of incidence or of wavelength. This information is then used, through the use of curve fitting techniques or formulas, to determine the thickness of the semiconductor wafer. Furthermore, the present invention may be used to determine if wedging of the semiconductor occurs and, if wedging does occur, to provide leveling information to the thinning apparatus such that a grinding surface can be adjusted to reduce or eliminate wedging.

Wafer thickness control during backside grind

A common-path, point-diffraction, phase-shifting interferometer uses a half wave plate having a diffractive element, such as pin hole. A coherent, polarized light source simultaneously generates a reference beam from the diffractive element and an object beam from remaining portions of the light going through the half wave plate. The reference beam has a nearly spherical wavefront. Each of the two beams possesses a different polarization state. The object and reference beams are then independently phase modulated by a polarization sensitive phase modulator that shifts phase an amount depending on applied voltage and depending on polarization state of the incident light. A polarizer is then used to provide the object and reference beams in the same polarization state with equal intensities so they can interfere to create an interferogram with near unity contrast.

Common-path point-diffraction phase-shifting interferometer incorporating a birefringent polymer membrane

A multi-chip stack structure and method of fabrication are provided utilizing self-aligning electrical contact arrays. Two or more arrays of interconnection contacts are provided, with one array being a rough aligned contact array, and a second array being a high bandwidth contact array. The rough aligned contact array has larger contacts and at least a portion thereof which melts at a substantially lower temperature than the melting temperature of the contacts of the high bandwidth contact array. By positioning two integrated circuit chips in opposing relation with the arrays mechanically aligned therebetween, and applying heat to melt the contacts of the rough aligned array, the two chips will rotate to align the respective contacts of the high bandwidth contact arrays, thereby achieving improved connection reliability between the structures.

Multi-chip stack and method of fabrication utilizing self-aligning electrical contact array

A method and system for dicing a semiconductor wafer providing a structure with greatly reduced backside chipping and cracking, as well as increased die strength. Semiconductor chip structures obtained from wafers diced according to this invention are also encompassed.

Method and system for dicing wafers, and semiconductor structures incorporating the products thereof

A method for increasing the critical temperature, T, of a high critical temperature superconducting (HTS) film () grown on a substrate () and a superconducting structure () made using the method. The HTS film has an a-b plane parallel to the surface of the substrate and a c-direction normal to the surface of the substrate. Generally, the method includes providing the substrate, growing the HTS film on the substrate and, after the HTS film has been grown, inducing into the HTS film a residual compressive strain the a-b plane and a residual tensile strain into the c-direction.

Structures for increasing the critical temperature of superconductors

A short intense pulse of radiation is generated by shining radiation through a magneto-optical material and providing multiple stimulations to the material. The material is excited multiple times to rapidly change a property of the radiation, such as the angle of its polarization. The first excitation rotates the polarization in a first direction and the second excitation can rotate the polarization further. Alternatively the second excitation can bring the polarization back to its initial direction. Effect of lengthy relaxation times in the material cancel each other out and the pulse of light has a length that depends on the time difference between the two excitations and the spacing between them. This allows a pulse of light to be produced that has more rotation or has a shorter pulse width than the time for excitation plus the time for normal relaxation of the magneto-optical material.

High amplitude fast optical modulator

Semiconductor structures are provided with on-board deuterium reservoirs or with deuterium ingress paths which allow for diffusion of deuterium to semiconductor device regions for passivation purposes. The on-board deuterium reservoirs are in the form of plugs which extend through an insulating layer and a deuterium barrier layer to the semiconductor substrate, and are preferably positioned in contact with a shallow trench oxide which will allow diffusion of deuterium to the semiconductor devices. The deuterium ingress paths extend through thin film layers from the top or through the silicon substrate. The latter include shallow trench isolations formed in a semiconductor substrate which are adjacent and connected to semiconductor devices formed in the semiconductor substrate, and where the back portion of the semiconductor substrate has been polished or ground down to the bottom of the shallow trench isolation, thereby allowing deuterium, during an anneal, to diffuse from the back through the shallow trench isolation to the semiconductor devices in the semiconductor substrate.

Deuterium reservoirs and ingress paths

Chip-on-chip interconnections of varied characteristics, such as varied diameters, heights and/or composition, are disclosed. A first chip-on-chip interconnection on a joining plane has a first characteristic (e.g., a first height) and a second chip-on-chip interconnection on the same joining plane has a second characteristic (e.g., a second height greater than the first height). The first and second characteristics of the chip-on-chip interconnections allow for chip-on-chip connections to other packages, substrates or chips of different levels and/or compositions.

Chip-on-chip interconnections of varied characterstics

Growing community of inventors

Essex Junction, VT, United States of America

Thomas George Ference