Micron Technology Incorporated

North Carolina State University

International Rectifier Corporation

Cree Gmbh

Infineon Technologies Americas Corp.

Nitronex Corporation

Macom Technology Solutions Holdings, Inc.

Qromis, Inc.

Macron Technology, Inc.

Thomas Gehrke

Kevin J Linthicum

Robert F Davis

T Warren Weeks, Jr

Cem Basceri

Edwin Lanier Piner

Zaiyuan Ren

Darren B Thomson

Lifang Xu

Scott E Sills

Scott D Schellhammer

Anton J De Villiers

Charles Martin Watkins

Martin F Schubert

Vladimir Odnoblyudov

Christopher Harris

Pradeep Rajagopal

Eric Porter Carlson

Casey R Kurth

Kevin Tetz

Tsvetanka Zheleva

Scott A Smith

Yushi Hu

Eric Blomiley

Jaydip Guha

Jaydeb Goswami

Zailong Bian

Xiaolong Fang

Tingkai Li

Kieran M Tracy

Ricardo M Borges

Cengiz Balkas

Elif Berkman

Light emitting diodes ('LEDs') with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

Light emitting diodes with n-polarity and associated methods of manufacturing

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Light emitting diodes and associated methods of manufacturing

Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

Engineered substrates for semiconductor devices and associated systems and methods

A semiconductor material includes a compositionally-graded transition layer, an intermediate later and a gallium nitride material layer. The compositionally-graded transition layer has a back surface and a top surface, and includes a gallium nitride alloy. The gallium concentration in the compositionally-graded transition layer increases from the back surface to the front surface. The intermediate layer is formed under the compositionally-graded transition layer. The gallium nitride material layer is formed over the compositionally-graded transition layer, and has a crack level of less than 0.005 &#x3bc;m/&#x3bc;m.

Semiconductor material having a compositionally-graded transition layer

Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

Conductive structures, wordlines and transistors

Light emitting diodes with N-polarity and associated methods of manufacturing

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon ('HSG') structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.

Solid state lighting dies with quantum emitters and associated methods of manufacturing

Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

Solid state lighting devices without converter materials and associated methods of manufacturing

Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

Devices, systems, and methods related to removing parasitic conduction in semiconductor devices

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

Light emitting devices with built-in chromaticity conversion and methods of manufacturing

Growing community of inventors

Boise, ID, United States of America

Thomas Gehrke