Fei Comapny

Thomas Gary Miller

Brian Routh, Jr

Richard J Young

Jason Harrison Arjavac

Chad Rue

Stacey Stone

Jeffrey Blackwood

Michael Schmidt

Noel Thomas Franco

Valerie Brogden

Todd Templeton

Dhruti Trivedi

Mark Utlaut

N William Parker

Shouyin Zhang

Michael Moriarty

Brad Larson

Laurens Franz Taemsz Kwakman

Aditee Shrotre

John F Flanagan, Iv

Peter Christiaan Tiemeijer

Bart Jozef Janssen

Anthony Graupera

Sean Kellogg

Mostafa Maazouz

Konstantin J Balashov

Gerardus Nicolaas Anne Van Veen

David Foord

Ivan Lazić

Mark Biedrzycki

Michael Strauss

Damon Heer

Brian Roberts Routh

Methods and apparatus are disclosed for integration of image-based metrology into a milling workflow. A first ion beam milling operation is performed to an edge at a distance from a final target position on a sample. An SEM image of the sample is used to determine a distance between the milled edge and a reference structure on the sample. Based on the determined distance, the ion beam is adjusted to perform a second milling operation to shift the milled edge to the final target position. Extensions to iterative procedures are disclosed. Various geometric configurations and corrections are disclosed. Manufacturing and analytic applications are disclosed in a variety of fields, including read-write head manufacture and TEM sample preparation. Other combinations of imaging and milling tools can be used.

Microscopy feedback for improved milling accuracy

Methods and systems for implementing artificial intelligence enabled preparation end-pointing are disclosed. An example method at least includes obtaining an image of a surface of a sample, the sample including a plurality of features, analyzing the image to determine whether an end point has been reached, the end point based on a feature of interest out of the plurality of features observable in the image, and based on the end point not being reached, removing a layer of material from the surface of the sample.

Artificial intelligence-enabled preparation end-pointing

A method and apparatus for material deposition onto a sample to form a protective layer composed of at least two materials that have been formulated and arranged according to the material properties of the sample.

Method of material deposition

A method, system, and computer-readable medium for forming transmission electron microscopy sample lamellae using a focused ion beam including directing a high energy focused ion beam toward a bulk volume of material; milling away the unwanted volume of material to produce an unfinished sample lamella with one or more exposed faces having a damage layer; characterizing the removal rate of the focused ion beam; subsequent to characterizing the removal rate, directing a low energy focused ion beam toward the unfinished sample lamella for a predetermined milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and milling the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer to produce the finished sample lamella including at least a portion of the feature of interest.

Dose-based end-pointing for low-kV FIB milling in TEM sample preparation

Techniques are described that facilitate automated extraction of lamellae and attaching the lamellae to sample grids for viewing on transmission electron microscopes. Some embodiments of the invention involve the use of machine vision to determine the positions of the lamella, the probe, and/or the TEM grid to guide the attachment of the probe to the lamella and the attachment of the lamella to the TEM grid. Techniques that facilitate the use of machine vision include shaping a probe tip so that its position can be readily recognized by image recognition software. Image subtraction techniques can be used to determine the position of the lamellae attached to the probe for moving the lamella to the TEM grid for attachment. In some embodiments, reference structures are milled on the probe or on the lamella to facilitate image recognition.

Automated TEM sample preparation

Apparatus and methods are described for the automated transfer and storage of transmission electron microscope (TEM) and scanning/transmission electron microscope (STEM) lamella samples throughout a semiconductor manufacturing facility using existing automation infrastructure such as a Front Opening Unified Pod (FOUP). Also provided are wafer facsimiles corresponding to outer dimensions of semiconductor, data storage or solar cell wafers, wherein the facsimiles adapted to store, carry and/or provide a testing platform for testing of samples taken from semiconductor, data storage or solar cell wafers.

Methods and apparatus for semiconductor sample workflow

Dose-based end-pointing for low-kV FIB milling TEM sample preparation

A system for analyzing defects comprises determining coordinates of a defect using a wafer inspection tool; identifying a structure of interest near the defect coordinates; directing a focused ion beam toward the wafer to expose the structure of interest; and forming an image of the exposed structure of interest, wherein the focused ion beam is directed to the mill at a location corresponding to the identified structure of interest rather than at the coordinates of the defect.

Defect analysis

An x-ray target, a method of using the x-ray target, and a computer program product with instructions for carrying out a method of using the x-ray target. The x-ray target includes a substrate made from a soft x-ray producing material and a high aspect ratio structure made from a hard x-ray producing material. The hard x-ray producing material is embedded in the substrate, formed on the substrate, cantilevered out from the edge of the substrate, or any combination thereof. The high aspect ratio structure comprises a plurality of high aspect ratio structures arranged in one or more grids or arrays, and the high aspect ratio structures in one of the one or more grids or arrays are arranged to form a Hadamard matrix structure.

High aspect ratio X-ray targets and uses of same

A method for rapid switching between operating modes with differing beam currents in a charged particle system is disclosed. Many FIB milling applications require precise positioning of a milled pattern within a region of interest (RoI). This may be accomplished by using fiducial marks near the RoI, wherein the FIB is periodically deflected to image these marks during FIB milling. Any drift of the beam relative to the RoI can then be measured and compensated for, enabling more precise positioning of the FIB milling beam. It is often advantageous to use a lower current FIB for imaging since this may enable higher spatial resolution in the image of the marks. For faster FIB milling, a larger beam current is desired. Thus, for optimization of the FIB milling process, a method for rapidly switching between high and low current operating modes is desirable.

Method for rapid switching between a high current mode and a low current mode in a charged particle beam system

High aspect ratio x-ray targets and uses of same

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Portland, OR, United States of America

Thomas Gary Miller