Tel Epion Corporation

Tel Nexx, Inc.

Thomas G Tetreault

John J Hautala

Sean R Kirkpatrick

Allen R Kirkpatrick

Martin D Tabat

Steven P Caliendo

Yan Shao

Wesley J Skinner

Ruairidh Maccrimmon

John O Borland

Stephen N Golovato

Nicolaus J Hofmeester

Ramya Chandrasekaran

Georgiy Seryogin

Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Method for increasing adhesion of copper to polymeric surfaces

A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material.

Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam

Embodiments of the invention describe methods and apparatus for assigning a beam intensity profile to a gas cluster ion beam and processing workpieces using a gas cluster ion beam. One embodiment includes generating a gas cluster ion beam in a gas cluster ion beam processing apparatus, collecting parametric data relating to the spatial intensity of the gas cluster ion beam, and generating a beam intensity profile describing the spatial intensity of the gas cluster ion beam by fitting a mathematical functional shape to the parametric data. Another embodiment describes a method for processing a workpiece using a gas cluster ion beam.

Methods and apparatus for assigning a beam intensity profile to a gas cluster ion beam used to process workpieces

Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation

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Manchester, NH, United States of America

Thomas G Tetreault