Novellus Systems Incorporated

Lam Research Corporation

Lam Research Foundation

Thomas G Jewell

Ramesh Chandrasekharan

Ming Chu Li

Dennis Michael Hausmann

Shankar Swaminathan

Mandyam Sriram

Jon Henri

Hu Kang

Easwar Srinivasan

Thomas W Mountsier

Aaron Durbin

Dirk Rudolph

Antonio Xavier

Tom Dorsh

Bryan Schlief

Adrien Lavoie

Karl Frederick Leeser

Bart Jan Van Schravendijk

Chunguang Xia

Damien Martin Slevin

Adrien LaVoie

Bart K Van Schravendijk

A method for controlling temperature of a substrate support includes receiving first and second currents corresponding to first and second heater elements, respectively, of a substrate support, receiving first and second voltages corresponding to the first and second heater elements, respectively, calculating a first resistance of the first heater element based on the first voltage and the first current, calculating a second resistance of the second heater element based on the second voltage and the second current, calculating a first temperature of a first zone of the substrate support based on the first resistance and stored data correlating resistances to temperatures, calculating a second temperature of a second zone of the substrate support based on the second resistance and the stored data, and selectively adjusting the stored data based on a comparison between a sensed temperature and at least one of the calculated first temperature and second temperature.

Use of voltage and current measurements to control dual zone ceramic pedestals

A controller for a substrate processing system includes a resistance calculation module configured to receive a first current and a second current corresponding to a first heater element and a second heater element, respectively, of a substrate support, receive a first voltage and a second voltage corresponding to the first heater element and the second heater element, respectively, calculate a first resistance of the first heater element based on the first voltage and the first current, and calculate a second resistance of the second heater element based on the second voltage and the second current. A temperature control module is configured to separately control power provided to the first heater element and the second heater element based on the first resistance and the second resistance, respectively, and respective relationships between the first and second resistances and first and second temperatures of the substrate support.

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Plasma activated conformal film deposition

A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes may include elbow features.

Point of use valve manifold for semiconductor fabrication equipment

Growing community of inventors

Tualatin, OR, United States of America

Thomas G Jewell