Lam Research Corporation

Thomas Frederick

Sunil Kapoor

Shane Farritor

Karl Frederick Leeser

Eric J Markvicka

Paul Konkola

Joe Bartels

Jack M Mondry

Eller Y Juco

Joseph Bartels

Kearney Lackas

Jacob Greenburg

Methods and apparatus for measuring capacitance are disclosed.

Capacitance measurement without disconnecting from high power circuit

An apparatus for providing signals to a device may include one or more radiofrequency signal generators, and electrically-small transmission line, which couples signals from the one or more RF signal generators to the fabrication chamber. The apparatus may additionally include a reactive circuit to transform impedance of the electrically-small transmission line from a region of relatively high impedance-sensitivity to region of relatively low impedance-sensitivity.

Impedance transformation in radio-frequency-assisted plasma generation

A method of plasma-assisted semiconductor processing in multiple stations in a process chamber is provided. The method comprises: a) providing substrates at each of the multiple stations; b) distributing RF power to multiple stations to thereby generate a plasma in the station, wherein the RF power is distributed according to a RF power parameter that is adjusted to reduce station to station variations; c) tuning a frequency of the RF power, wherein tuning the frequency includes: i) measuring a current of the plasma; ii) determining, according to the current measured in (i), a change to the frequency of the RF power, and iii) adjusting the frequency of the RF power; and d) performing a semiconductor processing operation on the substrate at each station.

RF current measurement in semiconductor processing tool

An apparatus for providing signals to a device may include one or more radio frequency signal generators, and electrically-small transmission line, which coupled signals from the one or more RF signal generators to a fabrication chamber. The apparatus may additionally include a reactive circuit to transform impedance of the electrically-small transmission line from a region of relatively high impedance-sensitivity to region of relatively low impedance-sensitivity.

A method and an apparatus of plasma-assisted semiconductor processing is provided. The method comprises: a) providing substrates at each of the multiple stations; b) distributing RF power including a first target frequency to multiple stations to thereby generate a plasma in the stations, wherein the RF power is distributed according to a RF power parameter configured to reduce station to station variations; c) tuning an impedance matching circuit for a first station included in the multiple stations while distributing RF power to the first station by: i) measuring a capacitance of a capacitor in the impedance matching circuit without disconnecting the capacitor from the impedance matching circuit; and ii) adjusting, according to the capacitance measured in (i) and the RF power parameter, a capacitance of the capacitor; and d) performing a semiconductor processing operation on the substrate at each station.

A high frequency radio frequency (RF) generator that generates a high frequency RF signal is described. There is no need for another low frequency RF generator that generates a low frequency RF signal. A low frequency RF signal is pre-amplified within the high frequency RF generator to output a pre-amplified low frequency RF signal. Similarly, a high frequency RF signal is pre-amplified within the high frequency RF generator to output a pre-amplified high frequency RF signal. The high frequency RF generator combines the pre-amplified low frequency RF with the pre-amplified high frequency RF signal to provide a combined RF signal. The combined RF signal is amplified within the high frequency RF generator to supply an amplified signal to a match. There is also no need for another match for the low frequency RF generator.

Growing community of inventors

West Linn, OR, United States of America

Thomas Frederick