Intel Corporation

Thomas Francis Watson

Ravi Pillarisetty

Hubert C George

Lester Lampert

James S Clarke

Jeanette M Roberts

Stephanie A Bojarski

Nicole K Thomas

David J Michalak

Roman Caudillo

Florian Luethi

Stefano Pellerano

Felix Frederic Leonhard Borjans

Simon Schaal

Roza Kotlyar

Brennen Karl Mueller

Sarah Atanasov

Anne Y Matsuura

Jong Seok Park

Sonika Johri

Sushil Subramanian

JongSeok Park

Adam Holmes

Eric M Henry

Margaret Watson

Samuel Frederick Neyens

Guoji Zheng

Technologies for radiofrequency optimized interconnects for a quantum processor are disclosed. In the illustrative embodiment, signals are carried in coplanar waveguides on a surface of a quantum processor die. A ground ring surrounds the signals and is connected to the ground conductors of each coplanar waveguide. Wire bonds connect the ground ring to a ground of a circuit board. The wire bonds provide both an electrical connection from the quantum processor die to the circuit board as well as increased thermal coupling between the quantum processor die and the circuit board, increasing cooling of the quantum processor die.

Technologies for radio frequency optimized interconnects for a quantum processor

An array of spin qubits relies on a gradient magnetic field to ensure that the qubits are separated in frequency in order to be individually addressable. Furthermore, a strong magnetic field gradient is required to electrically drive the EDSR of the qubits. Quantum dot devices and related methods and systems that integrate magnetic materials in the gates to provide a gradient magnetic field are disclosed. Magnetic materials in different gates may be of different heights to improve frequency separation of neighboring qubits. Unlike previous approaches to quantum dot formation and manipulation, various embodiments of the quantum dot devices disclosed herein may enable improved control over magnetic fields and their gradients to realize better frequency targeting of individual qubits, help minimize adverse effects of charge noise on qubit decoherence and provide good scalability in the number of quantum dots included in the device.

Quantum dot devices with magnetic gates

An array of quantum dot qubits (e.g., an array of spin qubits) relies on a gradient magnetic field to ensure that the qubits are separated in frequency in order to be individually addressable. Furthermore, a strong magnetic field gradient is required to electrically drive the electric dipole spin resonance (EDSR) of the qubits. Quantum dot devices disclosed herein use microcoil arrangements for providing a gradient magnetic field, the microcoil arrangements integrated on the same chip (e.g., on the same die or wafer) as quantum dot qubits themselves. Unlike previous approaches to quantum dot formation and manipulation, various embodiments of the quantum dot devices disclosed herein may enable improved control over magnetic fields and their gradients to realize better frequency targeting of individual qubits, help minimize adverse effects of charge noise on qubit decoherence and provide good scalability in the number of quantum dots included in the device.

Quantum dot based qubit devices with on-chip microcoil arrangements

Quantum dot devices with three of more accumulation gates provided over a single row of a quantum dot formation region are disclosed. Each accumulation gate is electrically coupled to a respective doped region. In this manner, multiple single electron transistors (SETs) are provided along the row. Side and/or center screening gates may be used to apply microwave pulses for qubit control and to control electrostatics so that source and drain regions of the multiple SETs with quantum dots formed along the single row of a quantum dot formation region are sufficiently isolated from one another. Such quantum dot devices provide strong spatial localization of the quantum dots, good control over quantum dot interactions and manipulation, good scalability in the number of quantum dots included in the device, and/or design flexibility in making electrical connections to the quantum dot devices to integrate the quantum dot devices in larger computing devices.

Quantum dot devices with side and center screening gates

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack and a plurality of linear arrays of gates above the quantum well stack to control quantum dot formation in the quantum well stack. An insulating material may be between a first linear array of gates and a second linear array of gates, the insulating material may be between individual gates in the first linear array of gates, and gate metal of the first linear array of gates may extend over the insulating material.

Quantum dot devices

Disclosed herein are quantum dot devices with conductive liners, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a base, a first fin extending from the base, a second fin extending from the base, a conductive material between the first fin and the second fin, and a dielectric material between the conductive material and the first fin.

Quantum dot devices with conductive liners

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer; and a plurality of gates above the quantum well stack, wherein the gates are arranged in a ladder arrangement including two rails having at least N gates each and at least one active rung, and a number of active rungs in the ladder arrangement is less than N.

Connectivity in quantum dot devices

Embodiments of the present disclosure describe integrated quantum circuit assemblies that include quantum circuit components pre-packaged, or integrated, with some other electronic components and mechanical attachment means for easy inclusion within a cooling apparatus. An example integrated quantum circuit assembly includes a package and mechanical attachment means for securing the package within a cryogenic chamber of a cooling apparatus. The package includes a plurality of components, such as a quantum circuit component, an attenuator, and a directional coupler, which are integral to the package. Such an integrated assembly may significantly speed up installation and may help develop systems for rapidly bringing up quantum computers.

Integrated quantum circuit assemblies for cooling apparatus

Combination high chair, rocking horse, and desk

A new variety of Amelanchier grandiflora is disclosed which is characterized by its unique yellow flower buds unfold into white flowers, its wide-spread branches, and, most particularly, by a brilliant red fall foliage display.

Amelanchier named 'Princess Diana'

A new variety of Amelanchier canadensis is disclosed which is characterized by its large flowers, averaging 2 centimeters in size, which give rise to full form, densely packed, large, sweet fruit, up to 1/2 inch in size which are thus large, plentiful, and easily harvested.

Amelanchier shrub named 'Prince William'

A new variety of Amelanchier laevis is disclosed which is particularly characterized by its trait of achieving maximum floral display prior to the unfolding of its leaves so as to maximize the color display during the blossom period.

Growing community of inventors

Portland, OR, United States of America

Thomas Francis Watson