Commissariat a L'energie Atomique Et Aux Energies Alternatives

Stmicroelectronics S.a.

Stmicroelectronics (Crolles 2) Sas

Stmicroelectronics (Rousset) Sas

Thomas Ferrotti

Sébastien Cremer

Alain Chantre

Badhise Ben Bakir

Hélène Duprez

The invention relates to a III-V heterostructure laser device () arranged in and/or on silicon, comprising: The optical rib waveguide () is oriented so that at least one Bragg grating () is arranged on that side () of the slab waveguide () which is proximal relative to the gain medium () and in that the rib () is placed on that side () of the slab waveguide () that is distal relative to the gain medium ().

Laser device and process for fabricating such a laser device

A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.

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Grenoble, France

Thomas Ferrotti