Epcos Ag

Tdk Electronics Ag

At&s Austria Technologie & Systemtechnik Aktiengesellschaft

Tdk Electroncis Ag

Thomas Feichtinger

Sebastian Brunner

Axel Pecina

Oliver Dernovsek

Georg Krenn

Guenter Engel

Franz Rinner

Pavol Dudesek

Günter Pudmich

Uwe Wozniak

Thomas Puerstinger

Hannes Schiechl

Christian Hoffmann

Christian Block

Robert Krumphals

Alfred Hofrichter

Volker Wischnat

Pascal Dotta

Michael Hofstätter

Horst Schlick

Hermann Gruenbichler

Franz Schrank

Markus Koini

Christian Vockenberger

Bernhard Döllgast

Patrick Schmidt-Winkel

Klaus-Dieter Aichholzer

Edmund Payr

Guenter Pudmich

Günter Engel

Manfred Schweinzger

Johann Pichler

Christian Faistauer

Stefan Sax

Stefan Obermair

Hermann Grünbichler

Reinhard Sperlich

Nele Reimer

Markus Ortner

Günther Pudmich

Christian Hesse

Alois Kleewein

Stephan Steinhauser

Jerzy Kudlaty

Michael Hofstaetter

Andreas Buergermeister

Katharina Tauber

Roman Geier

Jörg Lauenstein

Werner Salz

Thomas Pürstinger

Thomas Hoelbling

Markus Albrecher

Werner Rollett

Werner Tschnuchnig

Thomas PÜRSTINGER

Thomas HÖLBLING

In an embodiment a sensor device includes a sensor chip having a plurality of printed ceramic layers and unprinted ceramic layers, at least one termination layer configured to make electrical contact with an electrically conductive material, wherein the termination layer is formed at least on a top side and/or on a bottom side of the sensor chip, wherein the printed ceramic layers are at least partially printed with an electrically conductive material, and wherein an electrical resistance of the sensor chip is determined by an overlap area of the electrically conductive material or by a distance of the electrically conductive material from the termination layer and at least one damping layer directly located at at least a partial area of an outer surface of the sensor chip, wherein the damping layer includes a material which has a greater elasticity than a material of the termination layer.

Sensor device and method for manufacturing a sensor device

A component is disclosed. In an embodiment the component includes a light-emitting element and a structured layer having an optical functionality, wherein the structured layer is arranged on the light-emitting element.

Component

In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Sias a first dopant and second dopants having at least one compound containing a metal cation from Al, B, or Ba, wherein a corresponds to a molar proportion of Bi calculated as BiO, b corresponds to a molar proportion of Y calculated as YO, c corresponds to a molar proportion of Al calculated as AlO, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as BO, f corresponds to a molar proportion of Si calculated as SiO, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as CoO, i corresponds to a molar proportion of Cr calculated as CrO, j corresponds to a molar proportion of Sb calculated as SbO, and k corresponds to a molar proportion of Mn calculated as MnO.

Ceramic material, varistor, and method for producing the ceramic material and the varistor

An electronic device is disclosed. In an embodiment an electronic device includes at least one first carrier and at least one semiconductor chip, wherein the first carrier has a cavity in which the semiconductor chip is arranged.

Electronic device

In an embodiment an LED module includes a support having at least two segments, wherein each segment is configured to emit light, wherein each segment has at least two light-emitting diodes that differ in terms of their colors, wherein the support has a multilayer structure and/or wherein the support has a substrate having a ceramic material and the ceramic material includes aluminum nitride, aluminum oxide or a varistor ceramic, and wherein the LED module is configured to set a brightness and a color of the emitted light separately for each segment.

LED module and use of the LED module

An LED module is disclosed. In an embodiment an LED module includes a thermally conductive substrate made of a multilayer ceramic, at least one LED on the substrate, passive SMD components arranged on the substrate, a passive component integrated in the substrate and a heat spreader configured to dissipate waste heat in horizontal and vertical directions.

LED module

In an embodiment a multilayer varistor includes a ceramic body made from a varistor material, wherein the ceramic body includes a plurality of inner electrodes, first regions and second regions, wherein the varistor material in the first regions has a first average grain size D, wherein the varistor material in the second regions has a second average grain size D, and wherein D&#x3c;D.

Multilayer varistor having a field-optimized microstructure

A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

Ceramic multi-layer component and method for producing a ceramic multi-layer component

The present invention relates to a carrier () with a passive cooling function for a semiconductor component (), having a main body () with a top side () and a bottom side () and at least one electrical component () that is embedded in the main body (), wherein the carrier () has a first thermal via (), which extends from the top side () of the main body () to the at least one electrical component (), wherein the carrier () has a second thermal via (), which extends from the at least one electrical component () to the bottom side () of the main body (), and wherein the at least one embedded electrical component () is electrically contacted by the first and the second thermal via ().

Carrier with a passive cooling function for a semiconductor component

A substrate is disclosed. In an embodiment, a substrate includes a ceramic main body, an organic surface structure on at least one first outer face of the ceramic main body and outer redistribution layers integrated into the organic surface structure.

Substrate

A multi-LED system is disclosed. In an embodiment a multi-LED system includes a ceramic multilayer substrate in which at least two ESD protection structures are integrated, at least two light-emitting diodes arranged on the substrate and at least two capping layers covering one of the light-emitting diodes.

Multi-LED system

A multi-LED system includes a carrier; and a plurality of light-emitting diodes arranged on the carrier, wherein the carrier has a main body, and a plurality of electrical components are embedded in the main body.

An electrical component for embedding into a carrier comprises a ceramic main body, an electrically insulating passivation layer which is applied to the main body, and at least one inner electrode. In addition, the electrical component comprises an outer electrode which is connected to the inner electrode, wherein the outer electrode comprises a first electrode layer comprising a metal and a second electrode layer which is arranged on the latter and comprises copper.

Electrical component, component arrangement, and a method for producing an electrical component and component arrangement

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment a multilayer component includes a ceramic main element and at least one metal structure, wherein the metal structure is cosintered and wherein main element is a varistor ceramic having &#x2265;90 mol % of ZnO, from 0.5 to 5 mol % of SbO, from 0.05 to 2 mol % of CoO, MnO, SiOand/or CrO, and &#x3c;0.1 mol % of BO, AlOand/or NiO.

Multilayer component and process for producing a multilayer component

A component assembly is disclosed. In an embodiment the assembly includes a carrier, a metallic structure arranged on the carrier, wherein the metallic structure comprises at least one cavity and an electrical component arranged at least in part in the cavity, wherein the metallic structure comprises at least two part regions which are not connected to each other by any further part of the metallic structure, and wherein the cavity is located between the two part regions. The assembly further includes two contact areas located on the carrier, wherein the component is located on the two contact areas such that each part region of the two part regions is located on one of the two contact areas.

Electric component assembly

Growing community of inventors

Graz, Austria

Thomas Feichtinger