Avago Technologies General IP (singapore) Pte. Ltd.

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Thomas Faust

Robert Thalhammer

Paul D Bradley

Phil Nikkel

Alexandre Shirakawa

A bulk acoustic wave (BAW) resonator comprises: a first electrode; a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side; a piezoelectric layer disposed between the first and second electrodes, and an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the acoustic resonator; a bridge adjacent to a termination of the active area of the BAW resonator; and a discontinuity disposed in the bridge.

Bulk acoustic wave (BAW) resonator structure

An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. A bridge is disposed adjacent to one of the sides of the second electrode.

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Thomas Faust