University of Iowa Research Foundation

Thomas F Boggess

Michael Flatté

Kimberley C Hall

Wayne H Lau

Kenan Gündogdu

John P Prineas

Dennis Norton

Russell J Ricker

Methods and a device for cascading broadband emission are described. An example device can comprise a substrate, a bottom contact layer above at least a portion of the substrate, and a plurality of emission regions above the bottom contact layer. The plurality of emission regions can be disposed one above another. Each of the plurality of emission regions can be configured with different respective band gaps to emit radiation of different wavelengths. The device can comprise a plurality of tunnel junctions. Each of the tunnel junctions can be disposed between at least two corresponding emission regions of the plurality of emission regions. The device can comprise a top contact layer above the plurality of emission regions.

Cascaded broadband emission

A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.

Non-magnetic semiconductor spin transistor

Growing community of inventors

Iowa City, IA, United States of America

Thomas F Boggess