Hewlett-packard Development Company, L.p.

Shoei Chemical Inc.

Vadient Optics, LLC

Shoei Electronic Materials, Inc.

Thomas Eugene Novet

David M Schut

Zhizhang Chen

Paul J Benning

Sriram Ramamoorthi

Michael John Regan

Alexander N Govyadinov

George M Williams

Ronald L Enck

Gilbert G Smith

Mark Alan Johnstone

Brian E Bolf

Yukihisa Okawa

Masahito Igari

Paul H McClelland

Daniel W Petersen

Arthur Piehl

John Breen

James Denning Smith

Alok Sharan

Ngoc Thanh Nguyen

George Melville Williams

Michael David Bic

Michael David Bice

Spencer J H Alexander

Patrick M Haben

Daniel A Peterson

A continuous flow reactor for the efficient synthesis of nanoparticles with a high degree of crystallinity, uniform particle size, and homogenous stoichiometry throughout the crystal is described. Disclosed embodiments include a flow reactor with an energy source for rapid nucleation of theprocurors followingprecursors to form nucleates followedby a separate heating source for growing the nucleates. Segmented flow may be provided to facilitate mixing and uniform energy absorption of the precursors, and post production quality testing in communication with a control system allow automatic real-time adjustment of the production parameters. The nucleation energy source can be monomodal, multimodal, or multivariable frequency microwave energy and tuned to allow different precursors to nucleate at substantially the same time thereby resulting in a substantially homogenous nanoparticle. A shell application system may also be provided to allow one or more shell layers to be formed onto each nanoparticle.

Continuous flow reactor for the synthesis of nanoparticles

A method for producing metal oxide nanocrystals, according to the embodiment of the present invention, includes: continuously flowing, into a continuous flow path, one or a plurality of nanocrystal precursor solutions each comprising one or more nanocrystal precursors dissolved in a non-polar solvent; directing a segmenting gas into the continuous flow path to create a segmented reaction flow; flowing the segmented reaction flow into a thermal processor; heating the segmented reaction flow in the thermal processor to create a product flow; and collecting metal oxide nanocrystals from the product flow.

Method for producing metal oxide nanocrystals, method for producing multi-element oxide nanocrystals, and metal oxide nanocrystals

A method for producing a metal oxide nanocrystals according to the embodiment of the present invention comprises continuously flowing a nanocrystal precursor solution comprising a nanocrystal precursor into a continuous flow path and heating the nanocrystal precursor solution in the continuous flow path to create nanocrystals, comprising: providing a nanocrystal precursor solution supply unit that is connected to the continuous flow path and comprises a first vessel and a second vessel; delivering a nanocrystal precursor solution in the second vessel to the continuous low path; and creating a nanocrystal precursor solution in the first vessel as a different batch from the nanocrystal precursor solution in the second vessel.

Method for producing nanocrystals and nanocrystal production device

A continuous flow reactor for the efficient synthesis of nanoparticles with a high degree of crystallinity, uniform particle size, and homogenous stoichiometry throughout the crystal is described. Disclosed embodiments include a flow reactor with an energy source for rapid nucleation of the procurors following by a separate heating source for growing the nucleates. Segmented flow may be provided to facilitate mixing and uniform energy absorption of the precursors, and post production quality testing in communication with a control system allow automatic real-time adjustment of the production parameters. The nucleation energy source can be monomodal, multimodal, or multivariable frequency microwave energy and tuned to allow different precursors to nucleate at substantially the same time thereby resulting in a substantially homogenous nanoparticle. A shell application system may also be provided to allow one or more shell layers to be formed onto each nanoparticle.

A method of manufacturing a composite quantum-dot photodetector formed by alternatively dipping a substrate into a colloidal solution containing at least one type of a quantum dot, thereby forming a monolayer of the quantum dots and then dipping the substrate with the monolayer of the quantum dots into a ligand spacing solution to build a film of the quantum dots and then alternatively exposing the film of the quantum dots to a vapor and an infill material.

Composite quantum-dot materials for photonics detectors

A fluid-ejection assembly includes a die, a substrate, ribs, and adhesive. The die has nozzles through which fluid is ejected. The substrate provides the fluid to the die. The ribs are within the substrate, and have rounded corners. The rounded corners are adapted to provide a predetermined characteristic. The adhesive affixes the die to the substrate.

Fluid-ejection assembly substrate having rounded ribs

A method of creating a projection screen includes forming on a substrate a set of reflective areas directed to a first set of angles and forming on the substrate a set of absorptive areas directed to other than the first set of angles.

Ambient light absorbing screen

A projection screen for receiving projector light from a projector facing direction includes a substrate having a plurality of features. Each of the features includes a reflective surface oriented to the projector facing direction. Each of the reflective surfaces is curved in a first direction to provide a desired horizontal viewing angle, and is curved in a second direction to provide a desired vertical viewing angle.

A re-recordable data storage medium is disclosed. One embodiment of the medium includes a dielectric material and a filler material. The dielectric material is organized in columnar channels over which memory cells are logically distributed. The filler material is within the columnar channels to realize the memory cells. The filler material of each memory cell has at least a first configuration and a second configuration. The first configuration corresponds to a first storable logical value, and the second configuration corresponds to a second storable logical value.

Channeled dielectric re-recordable data storage medium

A tip, connected to a metal chip component, for forming readable changes in a memory storage system is disclosed. The tip includes a conductive layer, an amorphous silicon layer, and a silicide outer layer. The silicide outer layer contains a metal that has an anneal temperature to form the silicide outer layer at a temperature below that which damages the chip component.

Low temperature silicided tip

A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.

Method of manufacturing an emitter

An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Method of making a tunneling emitter

An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.

Tunneling emitters

An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Silicon-based dielectric tunneling emitter

An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.

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Corvallis, OR, United States of America

Thomas Eugene Novet