Aptina Imaging Corporation

Avago Technologies General IP (singapore) Pte. Ltd.

Other

Avago Technologies International Sales Pte. Limited

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Agilent Technologies, Inc.

Micron Technology Incorporated

Hewlett-packard Company

Broadcom International Pte. Ltd.

Avago Technologies Sensor IP Pte. Ltd.

Thomas Edward Dungan

Chintamani P Palsule

John H Stanback

Mark D Crook

Forest Dixon

Dietrich Werner Vook

Thomas Edward Kopley

Jonathan Kwadwo Abrokwah

Fredrick P LaMaster

Russell Wayne Gruhlke

Homayoon Haddad

Ronald Shane Fazzio

Changhoon Choi

Thomas Joy

Rick Snyder

Greg Halac

Eugene Coussens

Dariusz Burak

Phil Nikkel

R Shane Fazzio

Nathan Perkins

Peter Mark O'Neill

Philip Gene Nikkel

William Snodgrass

The present invention is directed to semiconductor devices and packages. According to an exemplary embodiment, one or more substrate extensions are coupled to a base substrate, with portions of one or more substrates extending beyond the base substrate. Electrical and/or optical connections are connected to these substrate extensions. There are additional embodiments as well.

Systems and methods for packaging semiconductor devices with scalable interconnects

Copper-connected glass modules on a glass board are provided. An apparatus includes one or more dies, an interposer formed of a first material, the interposer coupled to the one or more silicon dies, the interposer comprising an interconnection layer formed on one side of the interposer, wherein the interconnection layer includes a plurality of copper interconnects, and a substrate comprising a top layer, glass core, and a bottom layer, wherein the interconnection layer of the interposer and the top layer of the substrate are copper bonded.

Copper connected glass modules on a glass board

A memory system includes a memory stack including a number of memory dies interconnected via copper bonding, a logic die coupled to the memory stack via a copper bonding. The memory system further includes a buffer die extended to provide the copper bonding between the logic die and the memory stack and a silicon carrier layer bonded to the memory stack and the logic die.

Copper-bonded memory stacks with copper-bonded interconnection memory systems

A transistor module includes a substrate; a transistor on the substrate; a dielectric layer disposed over the transistor and the substrate; a metal layer disposed over the dielectric layer and the transistor, the metal layer contacting a portion of the transistor; a metal pillar disposed over the metal layer; and a dielectric cushion disposed between the metal layer and the metal pillar over the transistor. The dielectric cushion includes dielectric material that is softer than the metal pillar, for reducing strain on semiconductor junctions when at least one of tensile or compressive stress is exerted on the metal pillar with respect to the substrate. The transistor module may further include at least one buttress formed between the metal layer and the substrate, adjacent to the transistor, for further reducing strain on the semiconductor junctions by providing at least one corresponding alternative stress path that substantially bypasses the transistor.

Semiconductor structure with strain reduction

A thermally conductive and electrically insulating layer is provided over a semiconductor structure.

Semiconductor structure including a thermally conductive, electrically insulating layer

A heterojunction bipolar transistor (HBT) amplifier device includes transistor fingers arranged in parallel on a substrate. Each transistor finger includes a base/collector mesa stripe shaving a trapezoidal shaped cross-section with sloping sides, and having a base stacked on a collector; a set of emitter mesa stripes arranged on the base/collector mesa stripe; and emitter metallization formed over the set of emitter mesa stripes and the base/collector mesa. The emitter metallization includes a center portion for providing electrical and thermal connectivity to the emitter mesa stripes and extended portions extending beyond the base and overlapping onto the sloping sides of the base/collector mesa stripe for increasing thermal coupling to the collector. A common conductive pillar is formed over the transistor fingers for providing electrical and thermal conductivity. Also, thermal shunts are disposed on the substrate between adjacent transistor fingers, where the thermal shunts are electrically isolated from the transistor fingers.

Amplifier device comprising enhanced thermal transfer and structural features

An apparatus, a semiconductor package including the apparatus and a method are disclosed. The apparatus includes a semiconductor die having second stages of power amplifier disposed over a module substrate. The module substrate includes a plurality of layers, pluralities of vias, and pluralities of routing layers for heat dissipation and electrical connections.

Power amplifier die having multiple amplifiers

A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.

Moisture barrier for semiconductor structures with stress relief

A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.

Metal-oxide-semiconductor high electron mobility transistors and methods of fabrication

A tiered integrated circuit (IC) assembly includes stacks of a limited number of ICs coupled to each other and arranged in a first direction across a base tier and a second tier. The base tier includes ICs and a data bridge. Each of the ICs includes a respective array of through silicon vias (TSVs) arranged in parallel with the first direction. The data bridge includes submicron metal interconnects (densely spaced electrical conductors) arranged in a plane that is substantially orthogonal to the first direction. The second tier is adjacent to the base tier and includes respective high-performance ICs different from the ICs of the base tier. The TSVs provide power and ground paths to the ICs in the second tier. In an example embodiment, the ICs in the second tier support one or more data bridges for connecting adjacent stacks.

Tiered integrated circuit assembly and a method for manufacturing the same

A single integrated wafer package includes a micro electromechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS component on its first surface. The active device wafer has a first surface and includes an active device circuit on its first surface. The seal ring is adjacent the first surface of the MEMS wafer such that a seal is formed about the MEMS component. An external contact is provided on the wafer package. The external contact is accessible externally to the wafer package and is electrically coupled to the active device circuit of the active device wafer.

Wafer bonding of micro-electro mechanical systems to active circuitry

A three-dimensional pixel array, a method of manufacturing a pixel array and an imager including the three-dimensional pixel array. The three-dimensional array includes multiple groups of pixels, each group of pixels including a first layer and a second layer. The first layer includes multiple photosensitive elements, one per pixel in the group, at least one floating diffusion region connected to each photosensitive element in the group via at least one respective transfer gate per pixel and multiple transfer gate lines, at least two transfer gate lines connected to each respective transfer gate in each row of pixels. The second layer includes at least a rest transistor per group and a source follower transistor coupled to the shared floating diffusion in the first layer.

Growing community of inventors

Fort Collins, CO, United States of America

Thomas Edward Dungan