At+t Corp.

At&t Bell Laboratories

Thomas E Smith

George Gustave Zipfel, Jr

William T Lynch

Eliezer Kinsbron

Gregory Weston Terpay

Robert Zappulla

This disclosure describes a method for producing high-performance layered-element electrostrictive or piezoelectric actuators, and the resulting product. The process calls for steps that minimize decreases of the stack stiffness which usually characterize layered wafer actuators. These include making the wafers flat and parallel, using a referred wafer metalization process that does not affect wafer surface roughness, and using stock-bonding epoxies with viscosities which readily permit the bonding agent to 'wick' into the interface areas of the wafer/electrode stacks thereby to minimize the bond agent thickness.

Force generator for electrostrictive actuators

Disclosed is an electrodynamic moving coil actuator comprising one or more separate coils contained in interior spaces of a reactance mass. The coils are oriented in closely spaced parallel zones within the interior spaces. The spaces are formed and positioned to be outside of the static magnetic flux lines of the reactance mass. The static flux thus is substantially de-coupled from the dynamic magnetic field of the coil. Magnetic flux choke points are avoided, but at the same time, high volumetric efficiency is achieved. Each coil is attached to supports along its two long outer edges. The supports are connected to each other at their extremities by top and bottom plates which are connected by slide bars that also serve as tie rods. The reactance mass is mounted on the slide bars. The design is adapted to low frequency, high force applications such as active noise control automotive mufflers.

Reactance-mass actuator

A method of fabricating field effect transistors which includes control of threshold potential by an ion implantation limited to the active channel area. The active channel area is defined by a photoresist pattern. Ions are implanted into the exposed area in a concentration to achieve a desired threshold. Appropriate metals are deposited over the channel area to form a gate electrode. The photoresist is lifted off leaving the gate electrode in position over the channel area. If desired, a layer of polysilicon can be included prior to resist formation and later removed by an etchant which does not attack the gate electrode.

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Madison, NJ, United States of America

Thomas E Smith