Applied Materials, Inc.

Other

Thomas E Nowak

Juan Carlos Rocha-Alvarez

Sanjeev Baluja

Ganesh Balasubramanian

Bok Hoen Kim

Jianhua Zhou

Ramprakash Sankarakrishnan

Nagarajan Rajagopalan

Dale Robert Du Bois

Amit Kumar Bansal

Mohamad A Ayoub

Hichem M'Saad

Todd J Egan

Edward W Budiarto

Scott A Hendrickson

Patrick Reilly

Shahid Shaikh

Xinhai Han

Heung Lak Park

Jian J Chen

Terrance Y Lee

Zhijun Jiang

Michael Wenyoung Tsiang

Jeongmin Lee

Masaki Ogata

Sergey Starik

Dmitriy Panasyuk

Dustin Wenpin Ho

Andrzei Kaszuba

Visweswaren Sivaramakrishnan

Karthik Janakiraman

Alexandros T Demos

Tom K Cho

Tsutomu Tanaka

Andrzej Kaszuba

Kelvin Chan

Bo Xie

Li-Qun Xia

Tuan Anh Nguyen

Mehul B Naik

Deenesh Padhi

Mark A Fodor

Yao-Hung Yang

Abhijit Ashok Kangude

Inna Shmurun

Daemian Raj

Ji Ae Park

Ashish Shah

Ryan Yamase

Shamik Patel

Ran Ding

Eustathios Vassiliou

Mehdi Vaez-Iravani

Majeed Foad

Kang Sub Yim

Derek R Witty

Martin Jay Seamons

Ralf Hofmann

Kegang Huang

Sebastien Raoux

Juan Carlos Rocha

Eller Y Juco

Edward J Smith

Daping Yao

Ndanka O Mukuti

Meiyee Shek

Sesh Ramaswami

Mahendra Chhabra

Shamouil Shamouilian

Kevin P Fairbairn

Michael Santiago Cox

Amir Hamed Al-Bayati

Hari K Ponnekanti

Canfeng Lai

Mei-Yee Shek

Vladimir Zubkov

Peter I Porshnev

Imad Yousif

Padmanabhan Krishnaraj

Moshe Sarfaty

Dale R Dubois

Ping Xu

Nancy Fung

Ian Scot Latchford

Stefan A Wolff

Chiu Chan

Prahallad Iyengar

Michael P Nault

Joseph C Werner

Chau H Nguyen

Liliya Krivulina

Sang In Yi

Dave Silvetti

Soovo Sen

Josephine J Chang

Jason K Foster

Tersem Summan

Dale DuBois

Bok Heon Kim

Nam Le

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD process

A method and apparatus for positioning and heating a substrate in a chamber are provided. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Dual temperature heater

An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

Tunable ground planes in plasma chambers

Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

Apparatus and method for UV treatment, chemical treatment, and deposition

A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

Monitoring system for deposition and method of operation thereof

Embodiments described herein generally relate to a particle collection apparatus and probe head for the collection of particles on process tool components. In one embodiment, a particle collection apparatus for counting particles present on a processing tool component is disclosed herein. The particle collection apparatus includes a particle collector. The particle collector is configured to scan a processing tool component and collect particles collected from the processing tool component. The particle collector includes a body and a probe head coupled to the body. The probe head has a probe body and a controlled spacing element. The controlled spacing element is coupled to the probe body and is configured to form a uniform manifold between the probe body and the processing tool component.

Method and apparatus for surface nanoparticle measurement

A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

Method and system for supplying a cleaning gas into a process chamber

Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD apparatus and process

A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NFand Oto remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Method and hardware for cleaning UV chambers

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Elk Grove Village, IL, United States of America

Thomas E Nowak