Honeywell G.m.b.h.

Other

Thomas E Hendrickson

Ronald G Koelsch

Marc D Hartranft

Jack S Huang

Jon A Roberts

James M Daughton

Robert G Johnson

Keith W Golke

Clifford H Boler

Thomas C Spindler

Charles C Huang

Wolfgang Tetzlaff

Douglas B Butler

Field-effect transistor devices are provided having a relatively substantial capability to withstand reverse bias voltages. This capability is provided through providing shields in these devices near junctions in such devices which are subject to breakdown under large reverse bias voltages, those shields being operable at selected voltages. The device can also be provided having a relatively low 'on' condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice. A method for fabricating one such device is also disclosed.

Shielded field-effect transistor devices

An IGFET is presented which includes a relatively low resistance path across the source-substrate junction to prevent parasitic bipolar effects while maintaining high component density in integrated circuits. The low resistance path across the source-substrate junction is formed by various methods including damaging the crystal structure at the junction interface, supplementing the damaged junction with a heavily doped region underlying the source region and spiking metallurgy. A particular application of the invention allows the prevention of latchup in CMOS devices. The invention also allows the source region of an IGFET to serve the dual functions of a source for a MOSFET as well as an ohmic contact to the underlying well or substrate.

Reducing bipolar parasitic effects in IGFET devices

Field-effect transistor devices are provided having a relatively substantial capability to withstand reverse bias voltages. This capability is provided through providing shields in these devices near junctions in such devices which are subject to breakdown under large reverse bias voltages, these shields being operable at selected voltages. The device can also be provided having a relatively low 'on' condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice. A method for fabricating one such device is also disclosed.

FET for high reverse bias voltage and geometrical design for low on

A circuit arrangement is provided for a command source directing operation of a subsequent circuit. This command source circuit, based on using cross-coupled transistors, is electrically isolated from the subsequent circuit when no commands are being generated, and provides an output of constant polarity for input command signals of either constant or varying polarity.

Isolated control signal source

A capacitive acoustic transducer comprises a first field plate mounted to a semiconductor substrate structure, a second metal field plate having first and second oppositely and substantially exposed surfaces, and a mounting arrangement for mounting the second field plate to the semiconductor substrate structure so that the first and second field plates form an acoustically responsive capacitor, the first exposed surface of the second field plate substantially facing the first field plate, the mounting arrangement allowing the second field plate to respond to acoustic energy for altering the capacitance between the first and second field plates, the mounting arrangement including first and second contacts for respective connection to the first and second field plates. The method of fabricating this capacitive acoustic transducer includes the step of forming the second field plate on a disposable support structure, mounting the second field plate on the disposable support structure to the first field plate on the substrate structure and then disposing of the disposable support structure.

Method of making an acoustic microphone

Acoustic microphone

A semiconductor capacitance transducer includes adjoining integrated sensor and reference capacitance transducers formed from silicon wafers. The transducers are parallel plate transducers which are structurally the same except that one plate of the sensor transducer is a thin force sensing diaphragm which deflects in response to selected environmental phenomena while the corresponding plate of the reference transducer is adapted to deform in response to some, but not all, of the selected environmental phenomena. By comparing the capacitance of the transducers, the effects of the phenomena which deform the reference transducer can be distinguished from the effects of the phenomena which do not deform the reference transducer. A particular application of the present invention allows thermal effects on the sensor transducer to be distinguished from the effects of pressure. Also, the sensor and reference transducers are rendered substantially free from thermal stress by constructing their plates of the same semiconductor material and electrically isolating the plates with surface passivation layers.

High sensitivity variable capacitance transducer

A conductivity type thin film humidity sensor on a silicon chip which sensor includes structure which electrically shields the sensing area from highly dissociative contaminants.

Humidity sensor with electrical rejection of contaminants

Electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the controlling element. A circuit arrangement is provided for switching into the 'on' condition primary power control field-effect transistor device only when the voltage thereacross is at a relatively low value and for switching into the 'off' condition this device in a gradual manner, relatively slowly reducing currents flowing therethrough. A circuit arrangement for a command source directing operation of the primary power transfer control field-effect transistor device provides command source isolation.

Alternating polarity power supply control apparatus

An electronic control circuit is provided which operates on selected characteristics of oppositely phased control signals. A logic arrangement sorts out those signal portions having the selected characteristics to provide an output signal.

Dual signal control system

A photodetector signal processing arrangement is provided for converting small photodetector output signal currents to sufficiently high voltages to operate subsequent circuitry using the capacitance as the conversion needs.

Semiconductor apparatus

An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element.

A semiconductor device is provided having a plurality of photodiodes formed in series by polycrystalline semiconductor material.

A method for fabricating a field-effect transistor device is provided with the device resulting having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low 'on' condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice.

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Wayzata, MN, United States of America

Thomas E Hendrickson