International Business Machines Corporation

Western Digital (fremont), Inc.

Thomas E Dinan

Madhav Datta

John Ulrich Knickerbocker

Claude Louis Bertin

William R Tonti

Mark Vincent Pierson

Wayne Frederick Ellis

Wayne John Howell

Jerzy Maria Zalesinski

William T Chen

Paul A Totta

Horatio Seymour Wildman

Joseph Angelo Benenati

Ravindra V Shenoy

Swami Mathad

John Michael Cotte

Mohamad Towfik Krounbi

Thomas Safron Kanarsky

Frederick William Kern, Jr

Jose Antonio Medina

Tiffany Yun Wen Jiang

Michael B Pike

William E Corbin, Jr

Kirk G Berridge

A method and system for plating CoNiFe is disclosed. The method and system include providing a plating solution including hydroxymethyl-p-tolylsulfone and plating the CoNiFe film on a substrate in the plating solution. The plating solution is configured to provide a CoNiFe film having a high saturation magnetic flux density and having a composition of 50-70 weight percent of Fe and 3-8 weight percent of Ni. In another aspect, the method and system include plating at least a portion of a first and/or second pole of a write head using the plating solution including hydroxymethyl-p-tolylsulfone and configured to plate the CoNiFe film having a high saturation magnetic flux density and a composition of 50-70 weight percent of Fe and 3-8 weight percent of Ni.

Magnetic recording head with high saturation magnetic flux density CoNiFe thin film composition

An integrated circuit assembly has pads of a chip electrically connected to pads of a substrate with rolling metal balls. A pliable material bonds the balls in movable contact with pads of the chip and substrate. Because the balls are relatively free to move, thermal expansion differences that would ordinarily cause enormous stresses in the attached joints of the prior art, simply cause rolling of the balls of the present invention, avoiding thermal stress altogether. Reliability of the connections is substantially improved as compared with C4 solder bumps, and chips can be safely directly mounted to such substrates as PC boards, despite substantial thermal mismatch.

Rolling ball connector

A method of selectively and simultaneously depositing a non-reactive material such as a polyimide polymer to vertical sidewalls of a mesa-like structure is provided. The method of the present invention is useful in providing a modified mesa-like structure which prevents the flow of a reactive material along the vertical sidewalls of the mesa-like structure.

Use of argon sputtering to modify surface properties by thin film

In-situ identification of faulty electrical contacts in an electroprocessing fixture involves measuring resistance of contact pairs while the workpiece is mounted in the fixture, and calculating a resistance of an individual contact from the contact pair resistances. The individual contact resistances are compared with a maximum allowable resistance, and any contact having an individual resistance exceeding the maximum allowable resistance is identified as faulty. Faulty contacts are reseated, and then remeasured. The remeasuring can be of a subset of the whole set of contacts in the fixture.

In-situ contact resistance measurement for electroprocessing

Disclosed is an electrochemical etching apparatus including a fixture for holding a workpiece; a nozzle, positioned opposite the fixture and facing the workpiece, for impinging an etchant onto the workpiece; and an electrode for applying a voltage between the electrode and the workpiece; wherein, in operation, one of the fixture and nozzle are rotated and the nozzle is moved radially outwardly so that the workpiece is spirally etched. Also disclosed is a method of spirally etching a workpiece.

Electrochemical etching apparatus and method for spirally etching a

The present invention relates to a chemical etchant for etching metals in the presence of one or more metals not to be etched, the etchant comprising 10-25 gms EDTA, 15-35 gms K.sub.2 HPO.sub.4 and 25-45 gms oxalic acid in a liter of 30% H.sub.2 O.sub.2. More particularly, in the fabrication of interconnections for microchip structures, the present invention addresses the removal of intermediate adherent layers, e.g., Ti--W, without damaging other microchip structures made of other metals, such as Al or Al--Cu test pads; Cu and phased Cr--Cu layers; and Sn--Pb solder bumps. The use of potassium phosphate in the hydrogen peroxide+EDTA bath has been found to significantly reduce the attack on the metal not to be etched. Furthermore, the use of oxalic acid in the bath prevented the deposition of tin oxide on the substrate adherent layer metal, thus facilitating its complete removal.

Selective chemical etching in microelectronics fabrication

A nozzle is provided for use in electroetching a vertically oriented workpiece, comprising a housing having a top, sides, and bottom for creating a flow of etching solution on the workpiece, and means for shaping the flow of etching solution into a moving channel to improve etch uniformity of the workpiece.

Vertical electroetch tool nozzle and method

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San Jose, CA, United States of America

Thomas E Dinan