Strasbaugh

Thomas E Brake

Thomas A Walsh

William J Kalenian

Michael R Vogtmann

Larry A Spiegel

David L Grant

Benjamin C Smedley

A method of grinding wafers includes determining thickness variations in a wafer; determining incremental adjustments to spindle alignment based on best fit predictions of wafer shaper; and implemented the incremental adjustments to spindle alignment of a grind module.

Methods and systems for use in grind shape control adaptation

Some embodiments provide methods of processing wafers comprising: positioning a stacked wafer into a position to be ground, wherein the stacked wafer comprises a first wafer secured with a carrier-wafer, wherein the first wafer is secured with the carrier-wafer such that a surface of the first wafer is exposed to be ground; initiating a grinding of the first wafer while supported by the carrier-wafer; activating one or more sensors relative to the first wafer while grinding the first wafer; determining, while grinding the first wafer, a thickness of the first wafer separate from a thickness of the carrier-wafer as a function of data from the one or more sensors; determining whether the determined thickness of the first wafer has a predefined relationship with a first thickness threshold; and halting the wafer grinding when the thickness of the first wafer has the predefined relationship with the first thickness threshold.

Systems and methods of processing substrates

A method of processing a device wafer in a wafer stack by chucking the wafer stack device side down and grinding the exposed side of the carrier wafer to parallel with the device wafer, and thereafter flipping the wafer stack and chucking the wafer stack carrier side down and grinding residual silicon from the device wafer.

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San Luis Obispo, CA, United States of America

Thomas E Brake