Harris Corporation

L-3 Services, Inc.

Thomas Daniel O'Brien

John D Russell

Kenneth P Beghini

Timothy D Rountree

Mark David Rodzinka

Joseph Gerard Trabold

A system for managing the operation of a semiconductor device in accordance with varying load conditions that affect the power being dissipated by the semiconductor device, includes a sensor for measuring a temperature related to the junction temperature of an operating semiconductor device; electronic components for measuring the real-time operating load conditions of the operating semiconductor device; and a computer that is adapted by computer executable program instructions to perform the steps of:

Managing the operation of a semiconductor device under varying load conditions

A tunable bandpass filter () is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (V, V) inputted to the tunable bandpass filter () switches a first arrangement and a second arrangement of one or more tuning portions (---) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter () is produced by the switching. The tuning portions include the GaAs FET switch (), a first capacitor (-) connected at a first signal terminal of the GaAs FET switch and a second capacitor (-) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

High linearity tunable bandpass filter

A tunable bandpass filter () is provided. An RF signal is provided at an input of the tunable bandpass filter, and a level shifted control signal (VV) inputted to the tunable bandpass filter () switches a first arrangement and a second arrangement of one or more tuning portions (---) in or out of the tunable bandpass filter using a GaAs FET switch. The first arrangement is coupled to the second arrangement using an inductor (). An RF signal having a desired predetermined frequency at an output of the tunable bandpass filter () is produced by the switching. The tuning portions include the GaAs FET switch (), a first capacitor (-) connected at a first signal terminal of the GaAs FET switch and a second capacitor (-) connected between a second signal terminal of the GaAs FET switch and ground. Each of the tuning portions can be arranged in parallel with one another.

A temperature sensing system for a flange mounted device is provided. The temperature sensing system () can be comprised of a flexible wiring board (). The temperature sensing system can be further comprised of a temperature sensing device () mounted to the flexible wiring board. The flexible wiring board can have one or more conductive traces () disposed thereon. The conductive traces can form an electrical connection with the temperature sensing device. The temperature sensing system can also comprise a thermal pad directly connected to the temperature sensing device. The thermal pad can be formed of a thermal conductor. The thermal pad can also have a thermal contact surface. The thermal contact surface can be sized and shaped for direct physical contact with a portion of the device (), wherein thermal energy is communicated directly from the thermal pad to the temperature sensing device. A method for sensing a temperature of a flange mounted device is also provided.

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Honeoye Falls, NY, United States of America

Thomas Daniel O'Brien