Bengbu Design & Research Institute for Glass Industry

Saint-gobain Glass France

Cnbm Research Institute for Advanced Glass Materials Group Co., Ltd.

(cnbm) Bengbu Design Research Institute for Glass Industry Co. Ltd

Thomas Dalibor

Thomas Happ

Joerg Palm

Stefan Jost

Jörg Palm

Stephan Pohlner

Jorg Palm

Roland Dietmüller

Robert Lechner

Patrick Eraerds

Michael Algasinger

Roland Dietmueller

The present invention relates to a layer system () for thin-film solar cells () and solar modules, comprising

Layer system for thin-film solar cells

The present invention relates to a method for producing a compound semiconductor (), which comprises the following steps:

Method for producing a compound semiconductor, and thin-film solar cell

The present invention relates to a layer system () for thin-film solar cells with an absorber layer () that contains a chalcogenide compound semiconductor and a buffer layer () that is arranged on the absorber layer (), wherein the buffer layer () contains NaInSClwith 0.05&#x2266;x&#x3c;0.2 or 0.2&#x3c;x&#x2266;0.5, 1&#x2266;y&#x2266;2, and 0.6&#x2266;x/z &#x2266;1.4.

[object Object]

A method for the evaluative analysis of a photovoltaic layer system is described. The method applies to a semiconductor layer forming a pn junction: an electric current is generated in the layer system; a spatially resolved thermal image of the surface of the layer system is generated; an intensity distribution of the thermal radiation relative to the respective number of pixels with the same intensity value is determined; an intensity mean/median from the intensity distribution is determined; an intensity interval based on a specifiable measure for a scattering of the intensity distribution is determined; a characteristic number is determined; and the characteristic number or a calculation value based thereon is compared with a specifiable reference characteristic number.

Method for analysing photovoltaic layer systems using thermography

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Herrsching am Ammersee, Germany

Thomas Dalibor