Texas Instruments Corporation

Thomas D Bonifiield

Jiong-Ping Lu

Lindsey H Hall

Duofeng Yue

Donald S Miles

Clint Montgomery

The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor devices. The method for manufacturing a semiconductor device () , among other steps, includes forming a gate structure () over a substrate () and forming source/drain regions () in the substrate () proximate the gate structure (). The method further includes subjecting the gate structure () and substrate () to a dry etch process and placing fluorine in the source/drain regions to form fluorinated source/drains () subsequent to subjecting the gate structure () and substrate () to the dry etch process. Thereafter, the method includes forming metal silicide regions () in the gate structure () and the fluorinated source/drains ().

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Dallas, TX, United States of America

Thomas D Bonifiield