Nxp B.v.

Dsp Group Switzerland Ag

Thomas Christian Roedle

Radjindrepersad Gajadharsing

Stephan Jo Cecile Henri Theeuwen

Petra Christina Anna Hammes

Hendrikus Ferdinand Franciscus Jos

Carl F Allerstam

Elnar O Sveinbjornsson

Halldor O Olafsson

Gudjon I Gudjonsson

An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in the back-off region under class AB signal operation.

Electronic device comprising a field effect transistor for high-frequency applications

A method of manufacturing a semiconductor device based on a SiC substrate involves forming an oxide layer on a Si-terminated face of the SiC substrate at an oxidation rate sufficiently high to achieve a near interface trap density below 5&#xd7;10cm; and annealing the oxidized SiC substrate in a hydrogen-containing environment, to passivate deep traps formed in the oxide-forming step, thereby enabling manufacturing of a SiC-based MOSFET having improved inversion layer mobility and reduced threshold voltage. It has been found that the density of DTs increases while the density of NITs decreases when the Si-face of the SiC substrate is subject to rapid oxidation. The deep traps formed during the rapid oxidation can be passivated by hydrogen annealing, thus leading to a significantly decreased threshold voltage for a semiconductor device formed on the oxide.

Method for improving inversion layer mobility in a silicon carbide MOSFET

The invention relates to in particular a lateral DMOST with a drain extension (). In the known transistor a further metal strip () is positioned between the gate electrode contact strip and the drain contact () which is electrically connected with the source region contact (). In the device proposed here, the connection between the further metal strip () and the source contact () comprises a capacitor () and the further metal strip () is provided with a further contact region () for delivering a voltage to the further metal strip (). In this way an improved linearity is possible and the usefulness of the device is improved in particular at high power and at high frequencies. Preferably the capacitor () is integrated with the transistor in a single semiconductor body (). The invention further comprises a method of operating a device () according to the invention.

Semiconductor transistor (DMOS) device for use as a power amplifier

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Nijmegen, Netherlands

Thomas Christian Roedle