Cree Gmbh

3flow, Inc.

Rite-hite Holding Corporation

Wolfspeed, Inc.

Exposure Control Technologies, Inc.

Thomas C Smith

Saptharishi Sriram

Alexander V Suvorov

Scott Thomas Sheppard

Adam William Saxler

Christer Hallin

Kevin J Gebke

Helmut Hagleitner

Nicolas B Paschke

Blaine Schmidt

Paul C Curd

Tam N Trinh

An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.

Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same

A ventilation system for a space includes an air supply partition configured to cause filtered air to flow into an area of the space, and an air exhaust partition in spaced-apart relationship with the air supply partition and configured to cause air to be drawn in and filtered from the area. The air supply partition and the air exhaust partition create a 'push-pull' air flow across the area. A ventilation partition includes air inlets in a first portion of the housing, air outlets in a second portion of the housing, a filter, and a fan configured to draw air in through the air inlets, through the filter, and out through the air outlets. The partition is a portable, free-standing structure configured to be supported by a surface, such as a floor of a room in which the partition is located.

Ventilation partitions and systems

A fume hood adapted to be connected to an exhaust system has a ventilated chamber with a rear wall, opposite side walls, a ceiling, a floor, and an access opening. A baffle assembly is located in front of the rear wall and includes a lower panel and an upper panel. The lower panel has opposite side edges extending between the chamber side walls, a lower edge spaced apart from the chamber floor, and a plurality of air-exit apertures. The upper panel has opposite side edges extending between the chamber side walls, a lower edge attached to an upper portion of the lower panel, an opposite upper edge attached to the chamber ceiling, and a plurality of air-exit apertures. An elongated grating covers a gap between the lower panel lower edge and the chamber floor and includes a plurality of air-exit apertures.

Fume hood with baffle assembly

Fabric drop-down diffusers are disclosed. An example drop-down diffuser includes a first fabric sheet. The first fabric sheet is to extend away from a ceiling at a location adjacent a supply inlet. The supply inlet is to provide a flow of air toward the first fabric sheet. The example drop-down diffuser also includes a blanking sheet to restrict air flow through the first fabric sheet. The blanking sheet is to be disposed on an interior surface of the first fabric sheet. The blanking sheet has a lower permeability than the first fabric sheet.

Fabric drop-down diffusers

The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.

Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

A fume hood adapted to be connected to an exhaust system has a ventilated chamber having an access opening, and at least one horizontally sliding sash or panel at the access opening that is configured to cover and uncover portions of the access opening. Each horizontally sliding panel has a peripheral edge that convexly curves into the chamber towards a centerline of the at least one horizontally sliding panel. In some embodiments, the peripheral edge is convexly curved in an arc of between about ninety degrees and about one hundred eighty degrees (90&#xb0;-180&#xb0;). The exhaust system creates air flow into the chamber and the curved peripheral edge produces controlled air flow patterns into the chamber. The curved edge is aerodynamically designed to help shed vortices and prevent accumulation of concentrations on the inside edge of the each panel typical of conventional fume hood sashes/panels.

Fume hood with horizontally moveable panels

A fume hood includes a ventilated chamber having an access opening. A first elongated airfoil assembly is attached to an edge portion of a floor that extends from the opening. A sash is slidably mounted at the access opening and a second elongated airfoil assembly is attached to a lower edge of the sash. The first elongated airfoil assembly includes a plurality of elongated vanes in vertically spaced-apart relationship that define air flow channels. The second airfoil assembly includes a pair of elongated vanes in vertically spaced-apart relationship that define air flow channels that extend into the chamber. A baffle assembly is located in front of a rear wall of the chamber and includes a primary panel having a plurality of vertical air-exit slots adjacent a lower edge, and a buffering panel having a plurality of horizontal air-exit slots adjacent an upper portion.

Airfoil and baffle assemblies that reduce airflow requirements for fume hoods and fume hoods incorporating same

A monolithic electronic device includes a first nitride epitaxial structure including a plurality of nitride epitaxial layers. The plurality of nitride epitaxial layers include at least one common nitride epitaxial layer. A second nitride epitaxial structure is on the common nitride epitaxial layer of the first nitride epitaxial structure. A first plurality of electrical contacts is on the first epitaxial nitride structure and defines a first electronic device in the first nitride epitaxial structure. A second plurality of electrical contacts is on the first epitaxial nitride structure and defines a second electronic device in the second nitride epitaxial structure. A monolithic electronic device includes a bulk semi-insulating silicon carbide substrate having implanted source and drain regions and an implanted channel region between the source and drain regions, and a nitride epitaxial structure on the surface of the silicon carbide substrate. Corresponding methods are also disclosed.

Growing community of inventors

Raleigh, NC, United States of America

Thomas C Smith