Alliedsignal Inc.

Honeywell International Inc.

Thomas C Loughran

Mohammed A Fathimulla

James M O'Connor

David R Urech

A permeable protective coating for a single-ship hydrogen sensor. A hydrogen-permeable coating is applied to a semiconductor wafer containing hydrogen sensor dies, prior to dicing of the wafer. The permeable coating is preferably an organic spin-on polymer, and the hydrogen sensors preferably include hydrogen-sensing elements composed of a palladium nickel alloy.

Permeable protective coating for a single-chip hydrogen sensor

InP is etched by reactive ion etching using a mixture of SiCl.sub.4 and CH.sub.4 or a mixture of SiCl.sub.4 and H.sub.2. A mask is placed on the InP and then it is placed into a RIE chamber having a pressure between approximately 5 mTorr and approximately 50 mTorr. The InP substrate is etched at a substrate temperature of less than 150.degree. C.

Method for etching indium based III-V compound semiconductors

A method for forming a submicron width metal line on a substrate is described incorporating the steps of coating a substrate with a layer of photoresist, baking the layer, exposing the layer to a pattern, soaking the layer in a solution including chlorobenzene, developing the layer to form openings, baking the photoresist to remove any residual chlorobenzene, exposing the layer to deep ultraviolet radiation, baking the layer to cause the layer to flow at the edges of the openings, depositing metal on the layer and on the substrate, and dissolving the layer to lift off the metal disposited on the layer whereby the metal deposited on the substrate remains. The invention overcomes the problem of forming submicron width metal lines from one micron openings in a photoresist layer.

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Columbia, MD, United States of America

Thomas C Loughran