University of Southern California

Thomas C Hasenberg

Elsa M Garmire

A semiconductor laser of the heterostructure type is grown on a p-type substrate and has a plurality of p-type active layers. In a preferred embodiment, the active layers are grown by liquid phase epitaxy from a single melt which is maintained just below its equilibrium temperature and is cooled very slowly during deposition. As a result, the active layers are substantially identical in composition and have a very low lattice mismatch. They emit light at characteristic wavelengths within 50 angstroms of each other, indicating that their modal gain envelopes coincide. This condition minimizes the threshold current.

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Los Angeles, CA, United States of America

Thomas C Hasenberg