Infineon Technologies Ag

Thomas Borst

Jens Christopher Egerer

Helmut Schneider

Hermann Ruckerbauer

Robert Feurle

J&uuml;rgen Lindolf

The invention relates to a driver device and a method for operating a driver device in particular for a semiconductor device. The driver device includes a signal driver connected to a supply voltage. The driver device also includes a signal driver activating circuit section for activating a further signal driver when the supply voltage lies below a predetermined threshold value.

Driver device, in particular for a semiconductor device, and method for operating a driver device

The invention relates to a voltage regulating circuit arrangement for converting a first voltage (VEXT) applied to an input of said voltage regulating circuit arrangement into a second voltage (VBLH) that may be tapped at an output of said voltage regulating circuit arrangement, wherein, when said first voltage (VEXT) falls below a threshold value (VEXT_THRESHOLD), the first voltage (VEXT) applied to the input of said voltage regulating circuit arrangement is connected through to said output of said voltage regulating circuit arrangement.

Voltage regulator

An integrated dynamic memory contains a control circuit for controlling a refresh mode in which the memory cells undergo refreshing of their contents. A controllable frequency generator serves for setting a refresh frequency. A temperature sensor circuit detects a temperature of the memory and outputs a first reference value, and an externally writable circuit is provided for outputting a second reference value. The temperature sensor circuit and the externally writable circuit are alternatively connectible to the control input of the frequency generator for setting the refresh frequency. If the externally writable circuit has been written, the second reference value, which corresponds to a temperature, is fed to the frequency generator; otherwise, the first reference value is supplied. In this manner, users of the memory that are unable to measure temperature can expediently optimize the power consumption that is necessary for standby mode and reduce it at low temperatures.

Integrated dynamic memory with control circuit for controlling a refresh mode of memory cells, and method for driving the memory

A semiconductor memory module with a changeover device by which an internal voltage supply circuit can be switched on or off in a simple manner. The changeover device has two evaluation circuits, one evaluation circuit being used for switching on the voltage supply and the second evaluation circuit being used for switching off the voltage supply. In this way, the two evaluation circuits can be optimized with regard to functionality, circuit layout and current consumption.

Semiconductor memory module with low current consumption

A sense amplifier configuration includes a semiconductor substrate, a well having a variable well potential and insulated in the semiconductor substrate, and at least one field-effect transistor in the well. The transistor has a short channel length and an adjustable threshold voltage. Locating the field-effect transistor in an insulated well with a controllable potential allows for compensation of deviations in the threshold voltage with the substrate control effect. The threshold voltage can increase with increasingly larger negative voltage values of the well potential. The threshold voltage has an actual value and a target value, and the well potential can be controlled as a function of a difference between the actual and target threshold voltage values. The well potential can vary from approximately &plus;200 mV to &minus;400 mV, and in steps of approximately 50 mV. The field-effect transistor has a switched-off state, and the well potential can be different from an active potential in the switched-off state of the field-effect transistor, preferably, the well potential is 0 V in the switched-off state. The field-effect transistor can be a plurality of field-effect transistors all disposed in the well. The semiconductor substrate, the well, and the field-effect transistor can be fabricated by ion implantation.

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Neubiberg, Germany

Thomas Borst