Infineon Technologies Ag

Siemens Aktiengesellschaft

Thomas Bever

Udo Ausserlechner

Dirk Hammerschmidt

Alfons Dehe

Thoralf Kautzsch

Juergen Zimmer

Dirk Meinhold

Henning Feick

Dirk Offenberg

Stefano Parascandola

Ines Uhlig

Robert Aigner

Marc Fueldner

Hanno Melzner

Jürgen Zimmer

Joachim Weitzel

Stephan Schmitt

Hansjoerg Walter Kuemmel

Hans-J&ouml;rg Timme

Hans-Jörg Timme

Christian Kegler

Michael Brauer

Sebastian Luber

G&uuml;nter Ehrler

An example multi-turn counter (MTC) sensor includes a magnetic strip that includes a domain wall generator located at a first end of the magnetic strip, where the domain wall generator is to generate at least one domain wall in the magnetic strip, the at least one domain wall configured to propagate based on a magnetic field caused by a magnet; wherein a location of the at least one domain wall indicates a turn count of the magnetic field of the magnet; the turn count to indicate one or more of a predefined fraction of a full rotation of the magnetic field; an end tip located at a second end of the magnetic strip, where the second end of the magnetic strip is opposite the first end; and a plurality of overlapping strip turns that cause a plurality of crossings in the magnetic strip.

Multi-turn counter sensor

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

Controlling of photo-generated charge carriers

Some aspects described herein involve a multi-turn counter (MTC) system that includes a first MTC sensor configured to sense a rotating magnetic field coupled to a rotatable object. The first MTC sensor may have a first sense of rotation detection. The MTC system may include a second MTC sensor may be configured to sense the rotating magnetic field. The second MTC sensor may have a second sense of rotation detection which is opposite to the first sense of rotation detection, and the second MTC sensor is configured to sense the rotating magnetic field according to the second sense of rotation.

Multi-turn counter sensor failure detection

An apparatus includes a sensor arrangement with a sensor chip. A magnetic field generator is configured to generate a secondary magnetic field opposing an external primary magnetic field at the sensor chip. The magnetic field generator protects the sensor arrangement against the external primary magnetic field.

Method and apparatus for defined magnetizing of permanently magnetizable elements and magnetoresistive sensor structures

The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45&#xb0; angle with respect to an axis of the magnetoresistive device.

Integrated lateral short circuit for a beneficial modification of current distribution structure for xMR magnetoresistive sensors

A method of magnetizing a permanently magnetizable element associated with a magnetic field sensor structure includes generating a test magnetic field penetrating the magnetic field sensor structure and the permanently magnetizable element, detecting the magnetic field and providing a test signal based on a magnetic field through the magnetic field sensor structure, aligning the test magnetic field and the magnetic field sensor structure with the permanently magnetizable element to each other, until the test signal reaches a set value corresponding to a predetermined magnetized field distribution with respect to the magnetic field sensor structure, and generating a magnetizing field for permanently magnetizing the element to be permanently magnetized, wherein the magnetizing field corresponds to the predetermined magnetic field distribution within a tolerance range.

The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference between the wafer and the epitaxial layer by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors or microphones.

Micromechanical sensor and method for its production

A micromechanical sensor integrated on a chip, includes a semiconductor substrate, an electronic circuit, a void, a diaphragm, a counterelectrode and valve openings connecting a volume of the void to its surroundings. The valve openings are directed toward an upper surface of the wafer, and the counterelectrode is a component part of a coating plane that extends over the entire chip surface, so that the electronic semiconductor circuit can be applied to the coating plane by known semiconductor technology. A method for producing the micromechanical sensor as well as a microphone or a pressure sensor having the micromechanical sensor, are also provided.

Micromechanical sensor and method for producing the same

The invention relates to a semiconductor sensor having a base element (,) and at least one deformation element (,). The deformation element (,) is composed of a semiconductor substrate that is doped with a dopant of a first conductivity type. Piezoresistors (,) that are doped with a dopant of the opposite conductivity type are located in the deformation element (,). The deformation element (,) has at least one part that is in contact with a medium. The semiconductor sensor is characterized in that the part has a lower concentration of the dopant than a further region located between it and the piezoresistor (,).

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Munich, Germany

Thomas Bever