General Electric Company

Lockheed Martin Corporation

Martin Marietta Corporation

General Electric Corporation Gmbh

Boe Technology Group Co., Ltd.

Current Lighting Solutions, LLC

Thomas Bert Gorczyca

Paul Alan McConnelee

Robert J Wojnarowski

Richard J Saia

Herbert S Cole

Ernest Wayne Balch

Thomas Paul Feist

Donald A Bolon

Christopher James Kapusta

Kevin Matthew Durocher

Renato Guida

James Wilson Rose

Raymond Albert Fillion

Arun Virupaksha Gowda

Marc Schaepkens

William Edward Burdick, Jr

Samhita Dasgupta

Mario Ghezzo

Bernard Gorowitz

Richard Alfred Beaupre

Christian Maria Anton Heller

Charles Gerard Woychik

Anant Achyut Setlur

James Anthony Cella

Bin Wei

Stanton Earl Weaver, Jr

James Edward Murphy

Stephen Daley Arthur

Hua Xia

Alexander Viktorovich Bolotnikov

Glenn Scott Claydon

Svante Prochazka

Eladio Clemente Delgado

Ljubisa Dragoljub Stevanovic

Leonard Richard Douglas

Frederic F Ahlgren

John H Lupinski

Harald L Witting

Min Yan

Charles Adrian Becker

Tae Won Kim

Margaret Ellen Lazzeri

Stephan Popp

John E Hallgren

Ashfaqul Islam Chowdhury

Himanshu B Vakil

Seth D Silverstein

Matthew Frank Niemeyer

Steven Thomas Rice

Stanton Earl Weaver

Rolf S Bergman

Zachary Matthew Stum

Ahmet Gun Erlat

Ronald Frank Kolc

Wit Bushko

John E Davis

Joseph T Woods

Udo Heinz Retzlaff

Florencio Garcia

Min-Yi Shih

Christoph Georg Erben

Clive W Reed

Kung-Li Justin Deng

Laura Jean Meyer

Michael Scott Herzog

Stefan Rakuff

Theresa A Sitnik

Elizabeth Ann Burke

John Bradford Reitz

Jennifer L Myers

Somasundaram Gunasekaran

Stacey Joy Goodwin

Paul Alan Mc Connelee

Timothy Dietrich Page

Charles Samuel Huey

Richard Joseph Saia

Paul Alan Mcconnelee

Christian Maria Heller

Anaunt Achyut Setlur

James Jay Mcmahon

In an embodiment, a wide bandgap semiconductor power device, includes a wide bandgap semiconductor substrate layer; an epitaxial semiconductor layer disposed above the wide bandgap semiconductor substrate layer; a gate dielectric layer disposed directly over a portion of the epitaxial semiconductor layer; and a gate electrode disposed directly over the gate dielectric layer. The gate electrode includes an in-situ doped semiconductor layer disposed directly over the gate dielectric layer and a metal-containing layer disposed directly over the in-situ doped semiconductor layer.

Systems and methods for in-situ doped semiconductor gate electrodes for wide bandgap semiconductor power devices

A chip package is disclosed that includes an electronic chip having a plurality of die pads formed on a top surface thereof, with a polyimide flex layer positioned thereon by way of an adhesive layer. A plurality of vias is formed through the polyimide flex layer and the adhesive layer corresponding to the die pads. A plurality of metal interconnects are formed on the polyimide flex layer each having a cover pad covering a portion of a top surface of the polyimide flex layer, a sidewall extending down from the cover pad and through the via along a perimeter thereof, and a base connected to the sidewall and forming an electrical connection with a respective die pad. Each of the base and the sidewall is formed to have a thickness that is equal to or greater than a thickness of the adhesive layer.

Stress resistant micro-via structure for flexible circuits

A process for fabricating a LED lighting apparatus includes disposing a composite coating on a surface of a LED chip. The composite coating comprises a first composite layer having a manganese doped phosphor of formula I and a first binder, and a second composite layer comprising a second phosphor composition and a second binder. The first binder, the second binder or both include a poly(meth)acrylate.A[MF]:Mn&#x2003;&#x2003;(I)

LED package with red-emitting phosphors

A composite article with at least one high integrity protective coating, the high integrity protective coating having at least one planarizing layer and at least one organic-inorganic composition barrier coating layer. A method for depositing a high integrity protective coating.

High integrity protective coatings

A barrier coating for a composite article is provided. The barrier coating includes an organic zone; an inorganic zone; and an interface zone between the organic zone and the inorganic zone.

Barrier coating and method

An adhesive includes an epoxy resin and a hardener. The hardener includes trioxdiamine, diaminodicyclohexylmethane, toluene diamine, and bisphenol-A dianhydride.

Epoxy encapsulating and lamination adhesive and method of making same

Present embodiments are directed to an adhesive and method for assembling a chip package. The adhesive may be used to couple a chip to a substrate, and the adhesive may include an epoxy-based dielectric material, an epoxy resin, a photoacid generator, an antioxidant, and a cold catalyst corresponding to the photoacid generator.

Chip attach adhesive to facilitate embedded chip build up and related systems and methods

A semiconductor device package includes a semiconductor device having connection pads formed thereon, with the connection pads being formed on first and second surfaces of the semiconductor device with edges of the semiconductor device extending therebetween. A first passivation layer is applied on the semiconductor device and a base dielectric laminate is affixed to the first surface of the semiconductor device that has a thickness greater than that of the first passivation layer. A second passivation layer having a thickness greater than that of the first passivation layer is applied over the first passivation layer and the semiconductor device to cover the second surface and the edges of the semiconductor device, and metal interconnects are coupled to the connection pads, with the metal interconnects extending through vias formed through the first and second passivation layers and the base dielectric laminate sheet to form a connection with the connection pads.

Method of forming semiconductor device package having high breakdown voltage and low parasitic inductance

Packaged optoelectronic device include a first barrier layer having a plurality of feedthrough apertures communicating with at least one electrode layer of the device, and a plurality of conductive patches disposed on at least one of the plurality of feedthrough apertures for electrically connecting the device to a power supply. Each conductive patch includes a conductive metal surface layer and a non-conducting surface layer having an opening exposing the metal surface layer.

Electrical connectors for optoelectronic device packaging

Semiconductor device package having high breakdown voltage and low parasitic inductance and method of manufacturing thereof

An apparatus and method, the apparatus includes a substrate configured to support a plurality of dielectric layers, a device coupling area positioned in the substrate, and a plurality of gas exit apertures formed through the substrate. The plurality of gas exit apertures is configured to provide venting of at least one of moisture and outgassed material and the device coupling area is configured to receive an electronic device coupleable to the plurality of dielectric layers.

System and apparatus for venting electronic packages and method of making same

A method of forming a waveguide including a core region, a cladding region, and an index contrast region situated therebetween includes depositing a polymerizable composite on a substrate to form a layer, patterning the layer to define an exposed area and an unexposed area of the layer, irradiating the exposed area of the layer, and volatilizing the uncured monomer to form the waveguide, wherein the polymerizable composite includes a polymer binder and sufficient quantities of an uncured monomer to diffuse into the exposed area of the layer and form the index contrast region. The resulting waveguide includes an index contrast region which has a lower index of refraction than that of the core and cladding regions.

Index contrast enhanced optical waveguides and fabrication methods

A base composition is provided. The base composition includes a binder, a reactive monomer, and an anti-haze additive. The binder may include an optically transmissive polymer. The reactive monomer may be both curable and volatile. The binder and the reactive monomer have differing refractive indices relative to each other. A cured layer formed from the base composition may be formed into an article have particular properties. A method of making the layer is provided.

Composition, optical device article, and associated method

Disclosed is an optical device structure comprising a low shrinkage mixture wherein the shrinkage of the mixture is limited after the curing of the mixture during optical device formation. Disclosed also are methods for forming optical devices which comprise the low shrinkage mixture.

Self-forming polymer waveguide and waveguide material with reduced shrinkage

Growing community of inventors

Schenectady, NY, United States of America

Thomas Bert Gorczyca