Osram Opto Semiconductors Gmbh

Thomas Bauer

Lutz Höppel

Matthias Peter

Martin Strassburg

Ulrich Zehnder

Rainer Butendeich

Tetsuya Taki

Andreas Leber

A substrate carrier arrangement () for a coating system () is provided, comprising a carrier () which comprises at least one support region () having a support surface (), on which a substrate support () is arranged, and which support region comprises in the support surface () at least one first and one second gas inlet (), wherein the first gas inlet () is at a smaller distance from a center (M) of the support surface () than the second gas inlet () and wherein the first and second gas inlet () comprise mutually independent gas feeds () which are arranged to supply gases having mutually different thermal conductivities. A coating system comprising a substrate carrier arrangement and a method for performing a coating process are also provided.

Substrate carrier arrangement, coating system having a substrate carrier arrangement and method for performing a coating process

An optoelectronic semiconductor component comprising a semiconductor layer sequence () based on a nitride compound semiconductor and containing an n-doped region (), a p-doped region () and an active zone () arranged between the n-doped region () and the p-doped region () is specified. The p-doped region () comprises a p-type contact layer () composed of InAlGaN where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1 and x+y&#x2266;1. The p-type contact layer () adjoins a connection layer () composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer () has first domains () having a Ga-face orientation and second domains () having an N-face orientation at an interface with the connection layer ().

Optoelectronic semiconductor component

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Wuppertal, Germany

Thomas Bauer