Rf360 Singapore Pte. Ltd.

Qualcomm Incorporated

Snaptrack Incorporated

Rf360 Europe Gmbh

Thomas Bain Pollard

Brian Hal Fisher

Janardan Nath

Oscar Menendez-Nadal

Thomas Metzger

Alexandre Augusto Shirakawa

Yoshikazu Kihara

A BAW resonator is provided wherein the top electrode (TE) has an outer flap (OF). The flap extends away from the active resonator region (AR) and has a projecting section that runs at a level above the piezoelectric layer (PL) that is higher than the level of the top electrode at any of the inwardly located areas enclosed by the outer flap. The higher level is formed by an intermediate step-forming material (SM) arranged between piezoelectric layer and top electrode in the outer flap. The step forming material comprises a structured layer of an acoustic impedance that is low w.r.t. the impedance of the top electrode and the piezoelectric layer.

High Q BAW resonator with spurious mode suppression

A layer system especially for forming SAW devices thereon is proposed comprising a monocrystalline sapphire substrate having a first surface and a crystalline piezoelectric layer comprising MN, deposited onto the first surface, and having a second surface. As a first surface a crystallographic R-plane of sapphire is used enabling an orientation of c-axis of the piezoelectric layer parallel to the first and second surfaces.

Multiple layer system, method of manufacture and saw device formed on the multiple layer system

A high Q acoustic BAW resonator with high coupling and improved spurious mode suppression is given. The BAW resonator comprises an active resonator region (AR) formed by an overlap of the three layers bottom electrode (BE), piezoelectric layer (PL) and top electrode layer (TE). An inner-flap (IF) is formed by a dielectric 3D structure sitting on a marginal region (MR) of the active resonator region (AR) or adjacent thereto, extending inwardly towards the center thereof and having a section that runs in parallel and distant to the top surface of the resonator keeping an inner gap (IG) thereto or an angle &#x398;.

High Q acoustic resonator with dielectric flaps

Acoustic resonators with enhanced boundary conditions are disclosed. In an example aspect, a resonator includes a volume of piezoelectric material including an upper surface and a lower surface. The resonator also includes a bottom electrode extending along a portion of the lower surface of the volume of piezoelectric material. The resonator further includes a multi-layered top electrode extending along a portion of the upper surface of the volume of piezoelectric material. The multi-layered top electrode includes an active region including an interface layer of a first thickness, where the active region overlaps a portion of the bottom electrode. The multi-layered top electrode also includes a frame region including the interface layer of a second thickness, where the second thickness is greater than the first thickness. The multi-layered top electrode further includes an outer region including the interface layer of a third thickness, where the third thickness is less than the second thickness.

Acoustic resonator with enhanced boundary conditions

Example implementations of a bulk acoustic wave resonator with an optimized outer perimeter are disclosed. In an example aspect, a resonator includes a truncated-ellipsoid-shaped active region. The active region includes an outer electrode disposed as a first layer of the active region. The active layer also includes a piezoelectric layer disposed as a second layer of the active region with the piezoelectric layer disposed interior to the outer electrode. The active layer further includes an inner electrode disposed as a third layer of the active region with the inner electrode disposed interior to the piezoelectric layer.

Growing community of inventors

Longwood, FL, United States of America

Thomas Bain Pollard