Macdermid Enthone Gmbh

Enthone Incorporated

Other

Thomas B Richardson

Kyle M Whitten

Joseph Anthony Abys

Vincent Paneccasio, Jr

Richard W Hurtubise

Wenbo Shao

Cai Wang

Chen Wang

Xuan Lin

Yun Zhang

Chonglun Fan

Elie H Najjar

Chen Xu

Yung-Herng Yau

Karl F Wengenroth

Vincent Paneccasio

Ivan Li

Anthony Fiore

John Fudala

Theodore Antonellis

John Commander

Jianwen Han

Stephan I Braye

Stefan Schäfer

Pingping Ye

Eric Yakobson

Shaopeng Sun

Eric Rouya

Marlies Kleinfeld

Christian Rietmann

Ortrud Steinius

Sean Xuan Lin

Igor Zavarine

Jr Vincent Paneccasio

SCHÄFER Stefan

An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

Leveler compositions for use in copper deposition in manufacture of microelectronics

A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.

Composition and method for fabrication of nickel interconnects

A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.

Compositions and methods for the electrodeposition of nanotwinned copper

An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

Copper deposition in wafer level packaging of integrated circuits

An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P: 

An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Process for filling vias in the microelectronics

A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.

Levelers for copper deposition in microelectronics

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions.

Copper filling of through silicon vias

Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.

Silver plating in electronics manufacture

The invention relates to a cyanide-free electrolyte composition for depositing a silver or silver alloy layer on a substrate as well as a method for depositing silver or silver alloy layers with a cyanide-free electrolyte composition. The electrolyte composition according to the invention comprises at least one silver ion source, a sulfonic acid and/or a sulfonic acid derivative, a wetting agent and a hydantoin. The silver or silver alloy layers deposited from the inventive electrolyte composition by the method according to the invention are dull and ductile.

Cyanide-free electrolyte composition and method for the deposition of silver or silver alloy layers on substrates

The invention relates to a cyanide-free electrolyte composition for depositing a silver or silver alloy layer on a substrate as well as a method for depositing such layers with the help of said cyanide-free electrolyte composition. The electrolyte composition according to the invention comprises at least one silver ion source, a sulfonic acid and/or a sulfonic acid derivative, a wetting agent and a hydantoin. The silver or silver alloy layers deposited from such an electrolyte composition by means of the method according to the invention are dull and ductile.

Cyanide-free electrolyte composition, and method for the deposition of silver or silver alloy layers on substrates

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Killingworth, CT, United States of America

Thomas B Richardson