M/a -Com, Inc.

Macom Technology Solutions Holdings, Inc.

Other

Cobham Electronic Systems Corporation

Thomas Aaron Winslow

Christopher Dirk Weigand

Richard John Giacchino

Anthony Francis Quaglietta

Allen W Hanson

Ronald C Meadows

Xinjian Zhao

Disclosed are various embodiments for a pre-matched power resistance system including a pre-matching network for use with a passive electrical device, such as a Lange coupler or a Wilkinson power splitter, where the system provides a predetermined input impedance across a predetermined target bandwidth. The pre-matched power resistance system network further includes an on-chip thin film resistor disposed on a substrate comprising a plurality of coplanar sub-resistors electrically isolated from one another and a manifold portion comprising a plurality of manifold traces in a tiered arrangement terminating in an electrical connection to a respective one of the coplanar sub-resistors.

Prematched power resistance in lange couplers and other circuits

A monolithic microwave integrated circuit (MMIC) compatible broadside-coupled transformer including (i) a first transmission line, (ii) a second transmission line, and (iii) a third transmission line. The first and the second transmission lines generally form the broadside-coupled transformer. The third transmission line is generally connected in series with the broadside-coupled transmission line forming a ground return path of the broadside-coupled transformer.

Broadside-coupled transformers with improved bandwidth

An amplifier output impedance matching configuration including a first impedance transformer and one or more second impedance transformers. The first impedance transformer receives input signals from a power amplifier and generates output signals to a load. The one or more second impedance transformers are connected between the first impedance transformer and the load through which the output signals are passed.

Power amplifier with improved bandwidth

A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions. A plurality of FETs also may be provided with adjacent FETs electrically isolated.

Field-effect transistor (FET) with embedded diode

A MESFET and method for fabricating a MESFET are provided. The method includes forming an n-type channel portion in a substrate and forming a p-type channel portion in the substrate. A boundary of the n-type channel portion and a boundary of the p-type channel portion define an intrinsic region in the substrate.

Method for fabricating a MESFET

An apparatus and method for transmitting signal, the apparatus comprising a front end telecommunications module including a power amplifier, a matching circuit coupled to the power amplifier, and a filter coupled to the matching circuit, such that a signal received by the power amplifier is transmitted to the filter through the matching circuit. The telecommunications module provides quad-band capability in a compact design.

Handset radiofrequency front end module in fine pitch quad flat no lead (FQFP-N) package

An apparatus and method for amplifying a radiofrequency (RF) signal. The apparatus comprises a control circuit including a first transistor, a second transistor, and a ballast resistor coupled between an emitter terminal of the first transistor and a base terminal of the second transistor, such that a control voltage applied to a base terminal of the first transistor controls the amplification of a signal applied to the base terminal of the second transistor. Additional elements may be coupled to the control circuit to improve the performance thereof, including a feedback stabilization circuit, a diode stack circuit, a bypass capacitor and an additional resistor.

Apparatus, methods and articles of manufacture for power amplifier control in a communication system

HBTs in an HBT array are configured non-linearly, i.e., staggered, thus reducing the impact of thermal coupling between adjacent HBTs in the array and bypassing the minimum collector-to-collector spacing design rules required for a linear HBT array. Using this non-linear configuration, adjacent HBTs are misaligned with respect to each other. In a preferred embodiment, adjacent HBTs in the array are configured in a corner-to-corner arrangement, and in a more preferred embodiment, the collectors of the adjacent HBTs are aligned or are common, i.e., the collector of one HBT is shared with the collector of an adjacent HBT. In a most preferred embodiment, the HBTs are ballasted in an emitter-ballast/base-ballast pattern (referred to as &ldquo;mixed ballasting&rdquo; or &ldquo;dual-ballasting&rdquo;).

Compact non-linear HBT array

The invention is a dual band power amplifier with a small footprint having excellent band-to-band isolation. An improved second and fourth harmonic trap at the output of the low band power amplifier comprises a first capacitance shunted to ground placed in series with an inductance, the inductance preferably in the form of a transmission line of predetermined length, and a second capacitance coupled between an intermediate point of the transmission line inductance and ground. Band-to-band isolation can be additively increased by further forming a ground loop between the outputs of the two power amplifiers. The ground loop further isolates the high band amplifier from the low band amplifier by causing the magnetic fields generated around the output wire bonds of the low band power amplifier to set up circulating currents primarily in the ground loop, rather than coupling into the output wire bonds of the high band power amplifier.

Dual band power amplifier with improved isolation

A semiconductor amplifier includes collector straps that form air bridges over a set of transistors and make parallel electrical connections between the collectors of the transistor and collector contact pad. Base straps establish base bias and electrically connect a dc current source with bases of the transistors through resistive elements.

Growing community of inventors

Salem, MA, United States of America

Thomas Aaron Winslow