National Technology & Engineering Solutions of Sandia, LLC

Sandia Corporation

Other

Thomas A Friedmann

Roy H Olsson

Michael Wiwi

Matt Eichenfield

Khalid Mikhiel Hattar

John P Sullivan

Anthony L Lentine

Paul J Resnick

Todd Bauer

Douglas Chandler Trotter

Aleem Siddiqui

Brian D Homeijer

Blythe G Clark

James Kenneth Douglas

Nicholas Boynton

Sara Jensen Homeijer

Stuart B Van Deusen

Christopher Todd DeRose

Darren W Branch

Christopher Nordquist

Anna Tauke-Pedretti

Michael Gehl

Andrew Jay Leenheer

Jeremy Moore

Camille Padilla

Ashok Kodigala

Phillip Harrison Weiner

Katherine M Musick

A microelectromechanical systems (MEMS) inertial sensing device having a large proof mass with interlocking tabs is disclosed. The interlocking tabs limit motion of the proof mass when subjected to large inertial forces. The interlocking tabs are formed around the periphery of the proof mass and interact with corresponding interlocking tabs formed in a frame to which the proof mass is tethered. The motion of the proof mass is limited by the interlocking tabs, which are formed during MEMS fabrication of the inertial sensing device rather than as part of the packaging process. With a large proof mass, the inertial sensing device can provide high sensitivity in low inertial force environments while the interlocking tabs protect the device when subjected to high inertial forces.

Interlocking proof mass for mems inertial sensing device

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

Heterogeneous integration of an electro-optical platform

The present invention relates to tunable microresonators, as well as methods of designing and tuning such resonators. In particular, tuning includes applying an electrical bias to the resonator, thereby shifting the resonant frequency.

Solid-state tuning behavior in acoustic resonators

In an electro-optical modulator, an electro-optical modulation layer is bonded to a cladding layer that overlies a substrate. A modulation zone waveguide is optically coupled to the electro-optical modulation layer and optically coupled to an I/O waveguiding structure embedded in the cladding layer. The I/O waveguiding structure is conformed to guide input light toward the modulation zone waveguide and to guide output light away from the modulation zone waveguide.

Heterogeneously integrated electro-optic modulator

An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film. The III-V substrate is removed by etching down to the first etch stop layer. Deposition windows are opened by etching from the first etch stop layer down to the contact layer. Metal contact electrodes are deposited in the deposition windows.

Hybrid semiconductor-piezoacoustic radiofrequency device

A microelectromechanical systems (MEMS) accelerometer that has high sensitivity to motion along the z axis is discussed. The device includes two symmetrical sets of bilateral, diametrically opposed high aspect ratio flexures that tether a movable proof mass to the frame of the device. The flexures are designed in such a way as to restrict movement of the proof mass along the x and y axes but readily allow motion along the z axis. More specifically, when the device experiences an acceleration along the x or y axes, the proof mass is restricted from moving because some of the bilateral, diametrically opposed flexures are in compression and others are in tension.

High sensitivity single-axis MEMS accelerometer with bilateral flexures

An optical second-harmonic generator (or spontaneous parametric down-converter) includes a microresonator formed of a nonlinear optical medium. The microresonator supports at least two modes that can be phase matched at different frequencies so that light can be converted between them: A first resonant mode having substantially radial polarization and a second resonant mode having substantially vertical polarization. The first and second modes have the same radial order. The thickness of the nonlinear medium is less than one-half the pump wavelength within the medium.

Second harmonic generation in resonant optical structures

A single crystal micromechanical resonator includes a suspended plate of lithium niobate or lithium tantalate. The suspended plate and a support structure are formed from a single crystal.

Single crystal micromechanical resonator

The present invention relates to a single crystal micromechanical resonator. In particular, the resonator includes a lithium niobate or lithium tantalate suspended plate. Also provided are improved microfabrication methods of making resonators, which does not rely on complicated wafer bonding, layer fracturing, and mechanical polishing steps. Rather, the methods allow the resonator and its components to be formed from a single crystal.

Single crystal micromechanical resonator and fabrication methods thereof

A stress-relieved amorphous-diamond film is formed by depositing an amorphous diamond film with specific atomic structure and bonding on to a substrate, and annealing the film at sufficiently high temperature to relieve the compressive stress in said film without significantly softening said film. The maximum annealing temperature is preferably on the order of 650.degree. C., a much lower value than is expected from the annealing behavior of other materials.

Method of forming a stress relieved amorphous tetrahedrally-coordinated

A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials.

Method of depositing multi-layer carbon-based coatings for field emission

A multi-layer resistive carbon film field emitter device for cold cathode field emission applications. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.

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Albuquerque, NM, United States of America

Thomas A Friedmann