Silicon Storage Technology, Inc.

Tho Ngoc Dang

Alexander Kotov

Thuan Vu

Xian Liu

Jack Frayer

Eugene Jinglun Tam

Michael James Heinz

Jung Hee Yun

Michael K Doan

Yuniarto Widjaja

Hung Quoc Nguyen

Sang Thanh Nguyen

Richard Bruce Tanner

Melinda Dae Miller

Jesse Randal Wiseman

Mark Edmond Shadell

Ian Edward Schroeder

Steven Kuan-Chi Wu

Melissa A Uhlman

A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.

Non-volatile memory device with plural reference cells, and method of setting the reference cells

A method to eliminate program deceleration and to enhance the resistance to program disturbance of a non-volatile floating gate memory cell is disclosed. This method eliminates or minimizes the impact of the hole displacement current. This can be done, for example, by increasing the rise time of the high programming voltage applied to the high voltage terminal. Alternatively, the transistor of the non-volatile floating gate memory cell can be turned off until the voltage applied to the high voltage terminal has reached the programming voltage. This can be done, for example by delaying the voltage applied to either the low voltage terminal or to the control gate to turn on the transistor until the voltage at the high voltage terminal has past the ramp up voltage and has reached a level programming voltage.

Method of programming a non-volatile memory cell by controlling the channel current during the rise period

Method of programming a non-volatile memory cell to eliminate or to minimize program deceleration

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San Jose, CA, United States of America

Tho Ngoc Dang