Advanced Micro Devices Corporation

Xilinx, Inc.

Tho Le La

Subramanian N Venkatkrishnan

Mark T Ramsbey

John JianShi Wang

Hao Fang

Kathleen R Early

Jack F Thomas

Pei-Yuan Gao

Ying Shiau

Feng Wang

Anthony P Calderone

Jian Jun Shi

Richard E Lamm

Andreas L Astuti

Examples described herein provide a method for evaluating a programmable logic device (PLD) for compatibility with user designs. The method includes using a processor-based system: obtaining an indication of one or more failure bits of configuration memory of a programmable logic device (PLD); determining whether each of the one or more failure bits corresponds to a configuration memory bit to be used by a first PLD user design; if any of the one or more failure bits corresponds to a configuration memory bit to be used by the first PLD user design, classifying the PLD as unusable for the first PLD user design; and if none of the one or more failure bits corresponds to a configuration memory bit to be used by the first PLD user design, classifying the PLD as usable for the first PLD user design.

Method for adaptively utilizing programmable logic devices

Described are systems and methods for measuring the size uniformity of circuit features defined by the critical dimension of an integrated-circuit fabrication process. An integrated circuit is configured to include a number of oscillators, each occupying a region of the integrated circuit. Each oscillator oscillates at a frequency that depends on the critical dimension of features in the region in which it is formed. Consequently, the critical dimensions of regions across the surface of the integrated circuit can be mapped and compared by comparing the oscillation frequencies of identical oscillators formed in various regions of the integrated circuit. In programmable logic devices, oscillators can be implemented using programmable logic resources. In other embodiments, small, simple oscillators can be placed at various locations on the integrated circuit.

Methods and circuits for testing a circuit fabrication process for device uniformity

A method of decorating a semiconductor substrate with an etchant solution is provided for revealing defects, such as microscratches, resulting from an oxide chemical-mechanical planarization (CMP) polishing. An oxide layer is provided over the substrate made from, for example, tetraethylorthosilicate (TEOS). The oxide layer is polished by a CMP process which tends to leave behind microscratches and other defects that can cause conductivity problems on the wafer. To reveal the microscratches, the wafer is decorated or submerged in an etchant, such as an HF etchant, for a period of time. Following the decorating, the wafer is rinsed, dried and inspected. The method improves the ability to identify and optimize steps in a semiconductor fabrication process that cause semiconductor defects.

Method of inspecting a semiconductor wafer for defects

Interlevel dielectric thickness monitor for complex semiconductor chips

The accuracy of photolithographic processing, particularly in forming small diameter through holes and/or trenches in a dielectric layer, is improved by double-sided scrubbing the wafer prior to photolithography. It was found that particles adhering to the wafer backside resulting from prior processing steps cause inaccurate photolithographic processing, particularly at a submicron level. Double-sided wafer scrubbing removes such adhering particles, thereby improving photolithographic accuracy.

Doubled-sided wafer scrubbing for improved photolithography

A method of measuring the thickness of a dielectric layer above a plurality of structures of differing types within a semiconductor chip. The method comprises the steps of: forming a plurality of monitor boxes on a semiconductor chip such that each of said plurality of monitor boxes represents a structure type within the semiconductor chip and has substantially the same step height as one of a plurality of differing structure types; forming a dielectric layer over the semiconductor chip; and measuring a thickness of the dielectric layer above at least one of the plurality of monitor boxes, wherein said thickness represents a thickness of the dielectric layer above a structure of the structure type represented by the monitor box. Also disclosed is a semiconductor chip that allows for accurate dielectric thickness measurements. The chip comprises: a plurality of structures of differing types located on a surface within the semiconductor chip; and a plurality of monitor boxes, located on said surface within the semiconductor chip, upon which measurements of dielectric thickness can be made, wherein each of the plurality of monitor boxes represents a structure type within the semiconductor chip.

The accuracy of photolithographic processing, particularly in forming small diameter through holes and/or trenches in a dielectric layer, is improved by polishing the wafer backside prior to photolithography. It was found that particles adhering to and/or scratches on the wafer backside resulting from prior processing steps cause inaccurate photolithographic processing, particularly at a submicron level. Backside polishing, as by chemical-/mechanical polishing, removes such adhering particles and/or scratches, thereby improving photolithographic accuracy.

Backside wafer polishing for improved photolithography

An automated wafer defect management system in which wafer defect data are collected from wafer inspection instruments, converted into a standard data format and made available through a central database system to workstations for review, analysis, and evaluation.

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San Jose, CA, United States of America

Tho Le La