Exagan

Stmicroelectronics International N.v.

Stmicroelectronics France

Thierry Sutto

Laurent Guillot

Eric Moreau

Alain Bailly

Gérald Augustoni

A half-bridge electronic device comprises, in series, a low level switch and a high level switch connected at a central point, and respectively controlled by a first and a second activation/deactivation signal. The device comprises: a first and a second synchronization system configured to interpret a variation in the voltage at the central point, respectively along a falling edge and along a rising edge, and to respectively generate a first and a second synchronization signal separate from the first; a first and a second AND type logic gate respectively combining the first synchronization signal with a first control signal and the second synchronization signal with a second control signal, in order to respectively form the first and second activation/deactivation signals.

Half-bridge electronic device comprising two systems for optimizing dead-time between the switching operations of a high level switch and of a low level switch

A half-bridge electronic device comprises a high level switch and a low level switch in series that are connected at a central point, and a first and a second synchronization system: &#x2022; the first system comprising a first detection circuit configured to interpret a variation, following a falling edge, of the voltage (Vm) at the central point, and the first system being configured to generate a first synchronization signal (ATON-LS) for activating the low level switch; &#x2022; the second system comprising a second detection circuit configured to interpret a variation, following a rising edge, of the voltage (Vm) at the central point, and the second system being configured to generate a second synchronization signal (ATON-HS) for activating the high level switch.

Half-bridge electronic device comprising two systems for minimizing dead-time between the switching operations of a high level switch and of a low level switch

A power circuit switching device comprises two switching terminals, a high-voltage depletion mode transistor and a low-voltage enhancement mode transistor arranged in series between the two switching terminals, a first terminal for receiving a switching signal and electrically connected via a driver circuit to the gate of the high-voltage transistor, and a second terminal for receiving a control signal and electrically connected to the gate of the low-voltage transistor. The device comprises a normally-on protection circuit electrically connected between the second terminal and the gate of the high-voltage transistor to keep the high-voltage transistor in an off-state when the driver circuit is not electrically powered.

Power circuit switching device having a passive protection circuit

An integrated circuit comprises a housing, a plurality of connection pins, a first chip that includes a high-voltage depletion mode transistor, and a second chip that includes a low-voltage enhancement mode transistor. The first chip and second chip each comprise a gate bump contact, a drain bump contact and a source bump contact. The source bump contact of the high-voltage transistor is electrically connected to the drain bump contact of the low-voltage transistor so as to form a central node of the circuit. The circuit includes at least one first Kelvin pin that is electrically connected to the source bump contact of the low-voltage transistor.

Integrated circuit comprising a chip formed by a high-voltage transistor and comprising a chip formed by a low-voltage transistor

A power circuit switching device includes two switching terminals; a high voltage depletion mode transistor and a low voltage enhancement mode transistor arranged in series between the two switching terminals; a control circuit having a first input for receiving a switching signal and a second input for receiving a signal for activating the device, the control circuit being configured to put the switching device into an inactive state or an active state; a driver circuit for applying the switching signal to the gate of the high voltage transistor, the driver circuit being supplied with a first voltage from a first voltage source (VDR+) and with a second voltage from a second voltage source (VDR&#x2212;), the first and second voltages being respectively higher and lower than the threshold voltage of the high voltage transistor; and at least one programming module associated with the driver circuit, configured to program the incoming current which is to be injected at the gate of the high voltage transistor, and the outgoing current which is to be drawn from the gate; the programming module being able to be connected to a first and a second passive component for programming the incoming current and outgoing current, respectively.

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Seysses, France

Thierry Sutto