L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

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Commissariat a L'energie Atomique

L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

L'air Liquide, Societe Anonyme a Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude

Thierry Sindzingre

Stephane Rabia

Jason R Uner

Nicolas Potier

Claude Carsac

Denis Verbockhaven

Eric L Duchateau

Christian Larquet

Daniel Guerin

Serban Cantacuzene

Francedillaois Coeuret

Claude Bonet

Sylvie Mellul

Louise Peccoud

Barbara Charlet

Gilles Conor

Denis Verbokhaven

A method and installation for forming a coating on a substrate, wherein the substrate is contacted with a gas treatment atmosphere in order to carry out said coating. The gas treatment atmosphere includes a primary gas treatment mixture comprising excited or unstable gaseous species obtained from a device which converts an initial gas mixture into said species, and an adjacent gas treatment mixture comprising at least one gas precursor required to form said coating, whereby the adjacent mixture is not transported via said device. The adjacent gas treatment mixture is injected into the flow of the primary gas mixture when the gas exits from the device.

Process and installation for forming a layer on a substrate

This invention is related to a method for encapsulating bond regions in electronic components comprising, for example, metallic bond regions, the method comprising the steps of exposing an electronic component having at least one bond region through a primary gas atmosphere comprising unstable or excited gaseous species, the gaseous species being substantially devoid of any electrical charges, the primary gas atmosphere having a pressure ranging from about 0.5&times;10 Pa to about 3.0&times;10 Pa, thereby forming a treated, non-encapulated electronic component, then encapsulating the electronic component.

Systems and methods for application of substantially dry atmospheric plasma surface treatment to various electronic component packaging and assembly methods

A method for delivering at least two working gases from a common air supply comprising the steps of depleting the air in O,in order to obtain a first gas mixture having an O,content less than or equal to t,; delivering at least a portion of this first gas mixture as a first working gas; depleting another portion of this first gas mixture in O,in order to obtain the second gas mixture having an O,content less than or equal to t,, wherein t,is greater than t,; and delivering the second gas mixture as a second working gas.

Method and device for supplying several working gases, and its application to an installation for assembling electronic components

Method and apparatus for dry surface treatment of an object

The invention relates to a method for drying fluxing of a metallic surface before soldering or tinning using an alloy, according to which the surface to be fluxed is treated, at a pressure close to atmospheric pressure, with a gaseous treatment atmosphere comprising excited or unstable species and being substantially free of electrically charged species, which is obtained from a primary gas mixture and, optionally, an adjacent gas mixture, the primary gas mixture being obtained at the gas outlet of at least one apparatus for forming excited or unstable gas species, in which an initial gas mixture comprising an inert gas and/or a reducing gas and/or an oxidizing gas has been converted, the adjacent gas mixture not having passed through the apparatus.

Method and device for dry fluxing of metallic surfaces before soldering

The invention relates to a method for dry cleaning or dry fluxing metallic surfaces before, during, or after a reflow soldering operation. The metallic surfaces that are dry cleaned or dry fluxed include (1) the metallic substrate on which an at least partially metallic, electronic component is to be mounted, (2) the solder paste, and (3) the metallic portions of the electronic component. The method comprises treating the metallic surface with a gaseous treatment atmosphere comprising unstable or excited gaseous species, and is substantially free of electrically charged species.

Method and apparatus for reflow soldering metallic surfaces

The invention relates to a process for the dry surface treatment of at least one metal surface portion, according to which the portion is treated at a pressure close to atmospheric pressure by a gaseous treatment atmosphere comprising excited or unstable species and substantially devoid of electrically charged species, obtained from a primary gaseous mixture and if necessary an adjacent gaseous mixture, the primary gaseous mixture being obtained at the gas outlet of at least one device for the production of excited or unstable gaseous species, in which an initial gaseous mixture comprising an inert gas and/or a reducing gas and/or an oxidizing gas has been converted, the adjacent mixture not having passed through the device.

Process and apparatus for the dry treatment of metal surfaces

A method for dry fluxing at least one metallic surface of an article comprising the steps of:

Method for dry fluxing of metallic surfaces, before soldering or

Gas excitation device

Method and device for forming an excited gaseous atmosphere lacking

Method and device for forming an excited gaseous treatment atmosphere

A method for wave soldering a circuit having two or more faces comprising the steps of:

Method and device for wave soldering incorporating a dry fluxing

In a method of dry process fluxing at least one surface of a metallic article, the surface to be fluxed is treated with a plasma at atmospheric pressure of a gaseous mixture comprising hydrogen and optionally at least one inert gas. The invention also concerns an apparatus, particularly for practicing the process, as well as a process for soldering or plating.

Method and apparatus for dry process fluxing

The apparatus comprises a tight treatment enclosure (10), means (20,22) for the axial production of a carrier gas plasma, a solid plate (30) serving as an obstacle to the plasma and located perpendicular to the enclosure axis and downstream of the plasma production means, plasma diffusion means (40) located downstream of the obstacle plate, several non-ionized vector gas supply tubes (50) issuing axially into the enclosure beneath the diffusion means and all located in the same plane around the enclosure axis, a substrate carrier (56) positioned downstream of the vector gas supply tubes and perpendicular to the axis and annular pumping means (66,16) for the gaseous medium contained in the enclosure and positioned downstream of the substrate carrier.

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Cachan, France

Thierry Sindzingre