Thomson-Csf Semiconducteurs Specifiques

Thomson-Csf

Thierry Pacou

Jean-Pierre Hirtz

Pierre Briere

Marie-Noelle Charasse

Alain Bosella

Tung N Pham

Yann Genuist

Patrice Arsene-Henry

The disclosure relates to the making of the source and drain access regions of a field-effect transistor, these two regions being differentiated. The control region is defined by means of a three-layer mask of metal, resin and metal. A resin mask protects the drain access region, thus enabling the implantation of the source access region. After the dissolving of the resins, the drain access region is implanted.

Method for the manufacture of a transistor having differentiated access

The present invention concerns a transistor of semiconductor materials of the 3-5 group on silicon of the type comprising a silicon substrate, at least one layer of semi-insulating 3-5 material and several doped layers of 3-5 group semiconductor material in which is defined at least one conducting channel equipped with a gate metallization, each channel being situated between two access regions alternately known as source and drain, each source and drain regions with a metallization, one of the two access regions to a channel being electrically and thermally connected to the silicon substrate. In accordance with the invention, the transistor comprises between the silicon substrate and the semi-insulating layer of 3-5 group semiconductor material, at least one buffer layer of intrinsic silicon.

Transistor made of 3-5 group semiconductor materials on a silicon

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Les Ulis, France

Thierry Pacou