Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (grenoble 2) Sas

Alchimer

Thierry Mourier

Sylvain Maitrejean

Christophe Bureau

Sylvain Joblot

Jean-Philippe Colonna

Paul-Henri Haumesser

Olivier Guiller

A device includes a substrate and an integrated-circuit interconnect on a first side. A capacitor passes through the substrate possessing a first electrode having a first contact face electrically coupled to a first electrically conductive zone placed on a second side of the substrate and a second electrode electrically coupled to the interconnect. A through-silicon via passes through the substrate having at one end a first contact face electrically coupled to a second electrically conductive zone placed on said second side of the substrate and at the other end a part electrically coupled to the interconnect part. The two first contact faces are located in the same plane.

Process for producing a through-silicon via and a through-silicon capacitor in a substrate, and corresponding device

Growing community of inventors

Meylan, France

Thierry Mourier